Author

Seung Joo Myoung

Institution: Kookmin University

Observed institution: Kookmin University

ORCID: 0009-0003-5301-6129

Observed ORCID: 0009-0003-5301-6129

OpenAlex ID: A5079174122

Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

2022 · Tae Jun Yang, Je-Hyuk Kim, et al. · IEEE Transactions on Electron Devices · 30

Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

2024 · Tae Jun Yang, Jung Rae Cho, et al. · IEEE Access · 15

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

2024 · Da Yeon Lee, Jingyu Park, et al. · Solid-State Electronics · 9

Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications

2024 · Dong Hyeop Shin, Seung Joo Myoung, et al. · Ceramics International · 7

Spatial Degradation Profiling Technique in Self-Aligned Top-Gate a-InGaZnO TFTs Under Current-Flowing Stress

2022 · Jingyu Park, Sungju Choi, et al. · IEEE Electron Device Letters · 7

Effect of SiO2 interfacial layer on InGaZnO-based memristors for neuromorphic computing applications

2024 · Seung Joo Myoung, Dong Hyeop Shin, et al. · Ceramics International · 5

Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique

2023 · Seung Joo Myoung, Chang Il Ryoo, et al. · IEEE Electron Device Letters · 5

Analog switching and retention modulation in stack-designed InGaZnO memristors for neuromorphic systems

2025 · Seung Joo Myoung, Dong Hyeop Shin, et al. · Materials Science in Semiconductor Processing · 4

Characterization of a 10 × 10 Amorphous-InGaZnO Memristor Crossbar Array and Its Binary-Neural-Network Performance for 1T1M Integration

2026 · Seung Joo Myoung, Dong Hyeop Shin, et al. · IEEE Transactions on Electron Devices · 2

Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate

2025 · Seung Joo Myoung, Hyunkyu Lee, et al. · IEEE Transactions on Electron Devices · 2

Lateral Profile of Doping Concentration Extracted From the C‐V Characteristics in Self‐Aligned Top‐Gate Coplanar InGaZnO Thin‐Film Transistors

2026 · Seung Joo Myoung, Chang Il Ryoo, et al. · Advanced Electronic Materials · 1

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

2026 · Jae Woo Lee, Dong Hyeop Shin, et al. · Advanced Electronic Materials

Effects of the Oxygen Content of a-IGZO Field-Effect Transistors on Their Density of States and Dopant Concentration Lateral Profile Regarding Oxygen Scavenging

2026 · Seong Hoon Jeon, Wonjung Kim, et al. · IEEE Access

Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor

2025 · Jung Rae Cho, Jingyu Park, et al. · Solid-State Electronics

Works count: 14

Citation count: 87

H-index: 5

I10-index: 2