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Tilo Flade
Observed names:
Flade, T.,
T Flade,
T. Flade
Observed institutions:
Freiberger Compound Materials (Germany),
European Materials Research Society
OpenAlex ID:
A5079541436
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
2004
·
M. Jurisch
, F. Börner
, et al.
·
Journal of Crystal Growth
·
62
Detection of deep levels and compensation mechanism in undoped, liquid-encapsulated Czochralski n-type GaAs
1991
·
W. Siegel
, G. Kühnel
, et al.
·
Journal of Applied Physics
·
24
200mm GaAs crystal growth by the temperature gradient controlled LEC method
2001
·
A. Seidl
, S. Eichler
, et al.
·
Journal of Crystal Growth
·
23
Growth and characterization of 200mm SI GaAs crystals grown by the VGF method
2003
·
J Stenzenberger
, T Bünger
, et al.
·
Journal of Crystal Growth
·
22
Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach
1999
·
J Korb
, T Flade
, et al.
·
Journal of Crystal Growth
·
22
Development of a vertical gradient freeze process for low EPD GaAs substrates
2001
·
Th. Bünger
, D. Behr
, et al.
·
Materials Science and Engineering B
·
19
State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals
1999
·
T. Flade
, M. Jurisch
, et al.
·
Journal of Crystal Growth
·
17
Impurity Analysis of Silicon Epitaxial Layers by the 4.2 K Photoluminescence Spectroscopy
1986
·
R. Herzog
, G. Schramm
, et al.
·
physica status solidi (a)
·
12
Oxygen incorporation in undoped LEC-GaAs
1999
·
G Gärtner
, T Flade
, et al.
·
Journal of Crystal Growth
·
11
Recent Progress in GaAs Growth Technologies at FREIBERGER
2008
·
Stefan Eichler
, Frank Börner
, et al.
·
Wiley eBooks
·
6
Radiofrequency spark source mass spectrometric analysis of oxygen in undoped silicon crystals and of carbon in undoped and carbon doped gallium arsenide crystals
1994
·
B. Wiedemann
, K. Bethge
, et al.
·
Analytical and Bioanalytical Chemistry
·
6
Semi-insulating LEC GaAs sub strates with an improved macroscopic and mesoscopic homogeneity
1997
·
M. Jurisch
, T. Flade
, et al.
·
Materials Science and Engineering B
·
5
Material-related fundamentals of cutting techniques for GaAs wafer manufacturing
2005
·
Ralf Hammer
, Frank Bergner
, et al.
·
International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde)
·
3
Supplementing Silicon: the Compound Semiconductors
2004
·
M. Jurisch
, H. Jacob
, et al.
·
Springer eBooks
·
3
Medium-Deep Acceptors in LEC GaAs
1990
·
H. Witte
, W. Siegel
, et al.
·
physica status solidi (a)
·
2
4,2 K‐Photoluminescence Study of the Annealing Process in Neutron‐irradiated Silicon
1986
·
J. Sickert
, R. Herzog
, et al.
·
Crystal Research and Technology
·
1
Thermal Activation Energies of TJndoped Semi-Insulating LEC GaAs
1988
·
W. Siegel
, H. Witte
, et al.
·
De Gruyter eBooks
Zur Ausbildung von Fasertexturen von polykristallinem Zirkonium / On the Formation of Fibre Textures in Polycrystalline Zirconium
1971
·
Tilo Flade
, Wolfgang Hübner
, et al.
·
International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde)
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Works count:
24
Citation count:
238
H-index:
9
I10-index:
9
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