Author

Ali Houadef

Observed names: A. Houadef, Ali HOUADEF, Houadef, Ali

Observed institution: University of Boumerdes

ORCID: 0000-0001-6667-4436

Observed ORCID: 0000-0001-6667-4436

OpenAlex ID: A5079561731

HCI Degradation of LOCOS-based LDMOS Transistor fabricated by 1 μ m CMOS Process

2020 · Ali Houadef, Boualem Djezzar · 7

Detailed total ionizing dose effects on LDMOS transistors

2022 · Ali Houadef, Boualem Djezzar · Microelectronics Reliability · 6

Hot Carrier Degradation in Triple-RESURF LDMOS with Trenched-Gate

2021 · A. Houadef, B. Djezzar · IEEE International Conference on Microelectronics (MIEL) · 5

Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate

2021 · Ali Houadef, Boualem Djezzar · International Journal of RF and Microwave Computer-Aided Engineering · 5

Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD

2024 · Mrunal A. Khaderbad, Ali Houadef, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2

Design of an LDMOS Transistor Based on the 1 µm CMOS Process for High/Low Power Applications

2022 · Ali Houadef, Boualem Djezzar · International Conference on Computational Engineering and Intelligent Systems (ICCEIS) · 2

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Evaluation of Hot Carrier Impact on Lateral-DMOS with LOCOS feature

2021 · Ali HOUADEF, Boualem DJEZZAR · Algerian Journal of Signals and Systems · 2

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UIS Characterization of LOCOS-Based LDMOS Transistor Fabricated by 1 µm CMOS Process

2022 · Ali Houadef, Boualem Djezzar · International Conference on Computational Engineering and Intelligent Systems (ICCEIS) · 1

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Works count: 9

Citation count: 30

H-index: 4

I10-index: