Get started
Author

Kanjalochan Jena

Observed names: Jena Kanjalochan, K JENA, K Jena, K. Jena, KANJALOCHAN JENA
ORCID: 0000-0002-4705-962X
Observed ORCID: 0000-0002-4705-962X
OpenAlex ID: A5079754174
Conventional to Modern Methods of Soil NPK Sensing: A Review
2023 · Sneha Dattatreya, Abdul Naim Khan, et al. · IEEE Sensors Journal · 58
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices
2015 · Kanjalochan Jena, Raghunandan Swain, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 39
Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole–Frenkel Emission
2016 · Raghunandan Swain, Kanjalochan Jena, et al. · IEEE Transactions on Electron Devices · 37
A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis
2019 · S. N. Mishra, K. Jena · Journal of the Korean Physical Society · 36
RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate
2022 · Abdul Naim Khan, K. Jena, et al. · Silicon · 29
PDF
Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
2023 · Abdul Naim Khan, Aasif Mohammad Bhat, et al. · Microelectronics Reliability · 28
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor
2016 · Kanjalochan Jena, Raghunandan Swain, et al. · IET Circuits Devices & Systems · 24
Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs
2015 · KANJALOCHAN JENA, RAGHUNANDAN SWAIN, et al. · Pramana · 21
Normally-Off AlGaN/GaN MOSHEMT as Lebel Free Biosensor
2020 · S. N. Mishra, Rajesh Saha, et al. · ECS Journal of Solid State Science and Technology · 20
PDF
Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT
2016 · R. Swain, K. Jena, et al. · Materials Science in Semiconductor Processing · 18
Impact of a drain field plate on the breakdown characteristics of AlInN/GaN MOSHEMT
2015 · Kanjalochan Jena, Raghunandan Swain, et al. · Journal of the Korean Physical Society · 18
Interface DOS dependent analytical model development for DC characteristics of normally-off AlN/GaN MOSHEMT
2015 · Raghunandan Swain, Kanjalochan Jena, et al. · Superlattices and Microstructures · 18
Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT
2015 · Kanjalochan Jena, Raghunandan Swain, et al. · Journal of Electronic Materials · 16
Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT
2015 · R. Swain, J. Panda, et al. · Journal of Computational Electronics · 16
Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs
2015 · Kanjalochan Jena, Raghunandan Swain, et al. · Journal of Semiconductors · 15
PDF
Comparative analysis of single and triple material 10 nm Tri-gate FinFET
2024 · Shankhamitra Sunani, Satya Sopan Mahato, et al. · Journal of the Korean Physical Society · 14
Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT
2015 · Kanjalochan Jena, Raghunandan Swain, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 13
Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
2023 · Abdul Naim Khan, S. N. Mishra, et al. · Journal of Computational Electronics · 12
PDF
Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT
2016 · R SWAIN, K JENA, et al. · Pramana · 12
Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT
2016 · J. Panda, K. Jena, et al. · Journal of Semiconductors · 12
PDF
DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT
2016 · Suraj Gupta, S. N. Mishra, et al. · International Conference on Signal Processing, Communication, Power and Embedded System (SCOPES) · 11
Comparative study of AlN/GaN HEMT and MOSHEMT structures by varying oxide thickness
2014 · R. Swain, K. Jena, et al. · IEEE Nanotechnology Materials and Devices Conference (NMDC) · 11
Effect of AlN spacer thickness on device characteristics of AlInN/AlN/GaN MOSHEMT
2016 · Kanjalochan Jena, T. R. Lenka · IEEE Region 10 Conference (TENCON) · 8
An Approach Towards Low Cost III-Nitride GaN/InGaN Solar Cell: the Use of Si/SiCN Substrate
2021 · Abdul Naim Khan, K. Jena, et al. · Silicon · 7
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT
2016 · R. Swain, K. Jena, et al. · Semiconductors · 7
Works count: 56
Citation count: 546
H-index: 15
I10-index: 22
Year
Topic
Type