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Wangran Wu

Auxetic Black Phosphorus: A 2D Material with Negative Poisson’s Ratio
2016 · Yuchen Du, Jesse Maassen, et al. · Nano Letters · 247
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First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 μS/μm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters
2015 · Heng Wu, Wangran Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure
2021 · Guangan Yang, Mengyao Li, et al. · IEEE Transactions on Electron Devices · 27
Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains
2014 · Wangran Wu, Chang Liu, et al. · IEEE Electron Device Letters · 25
Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling
2016 · Heng Wu, Wangran Wu, et al. · IEEE Transactions on Electron Devices · 23
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
2022 · Guangan Yang, Hao Tian, et al. · IEEE Transactions on Electron Devices · 22
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors
2023 · Zuoxu Yu, Guangan Yang, et al. · IEEE Transactions on Electron Devices · 17
RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs
2016 · Wangran Wu, Heng Wu, et al. · Symposium on VLSI Technology · 14
Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs
2013 · W. Yu, B. Zhang, et al. · Microelectronic Engineering · 14
Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation
2013 · Jia-Bao Sun, Zhou-Wei Yang, et al. · Chinese Physics B · 14
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Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment
2023 · Wangran Wu, Wenting Xu, et al. · Microelectronics Reliability · 13
A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs With Ultralow Power Consumption
2023 · Zuoxu Yu, Hansong Xu, et al. · IEEE Electron Device Letters · 13
High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer
2024 · Wangran Wu, Tingrui Huang, et al. · IEEE Electron Device Letters · 12
InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching
2015 · J. Zhang, M. Si, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices
2023 · Wangran Wu, Wenting Xu, et al. · Microelectronics Reliability · 11
Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport
2018 · Wangran Wu, Heng Wu, et al. · IEEE Transactions on Electron Devices · 11
Carrier Mobility Enhancement by Applying Back-Gate Bias in Ge-on-Insulator MOSFETs
2017 · Wangran Wu, Heng Wu, et al. · IEEE Electron Device Letters · 11
Quaternary Nanobomb Triggered Ferroptosis and Pyroptosis Enhance Immunogenicity and Immunotherapy of Triple Negative Breast Cancer
2025 · Tao Lu, Wangran Wu, et al. · Small · 10
High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
2024 · Guangan Yang, Weijia Song, et al. · IEEE Transactions on Electron Devices · 10
Reliability Concerns on LDMOS With Different Split-STI Layout Patterns
2019 · Ran Ye, Li Lu, et al. · IEEE Transactions on Electron Devices · 10
Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
2019 · Long Zhang, Jing Zhu, et al. · IEEE Electron Device Letters · 10
Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs
2017 · Ran Cheng, Longxiang Yin, et al. · IEEE Electron Device Letters · 10
Positive bias stress reliability of InSnO TFTs: Analysis and Improvement strategies
2025 · Tingrui Huang, Jie Cao, et al. · Applied Surface Science · 9
Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain
2018 · Wangran Wu, Yaohui Wang, et al. · IEEE Transactions on Electron Devices · 9
Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields
2015 · Wangran Wu, Xiangdong Li, et al. · IEEE Transactions on Electron Devices · 9
Works count: 93
Citation count: 783
H-index: 12
I10-index: 22
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