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D. Lavielle
Observed names:
D Lavielle,
Denis Lavielle,
Lavielle, Denis
Institution:
Airbus (France)
Observed institutions:
Airbus (France),
Centre National de la Recherche Scientifique,
Université Oran 1 Ahmed Ben Bella,
Radboud University Nijmegen,
Institut National des Sciences Appliquées de Toulouse,
Technicolor (France),
Universidad Autónoma de Madrid
show all 7
OpenAlex ID:
A5080294168
Experimental Dose Enhancement in Multi-Layer Shielding Structures Exposed to High-Energy Electron Environments
2013
·
Sergio Ibarmia
, Julien Eck
, et al.
·
IEEE Transactions on Nuclear Science
·
18
Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers
1991
·
J Sanchez-Dehesa
, D Lavielle
, et al.
·
Semiconductor Science and Technology
·
13
Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP
1989
·
M. A. di Forte-Poisson
, C. Brylinski
, et al.
·
Journal of Applied Physics
·
12
Conduction-band structure dependence of persistent photoconductivity in Si-doped AlxGa1−xAs studied by Hall measurements under hydrostatic pressure
1989
·
B. Goutiers
, G. Gregoris
, et al.
·
Applied Physics Letters
·
10
Non Emergence of DX States in GaAs: Te under Hydrostatic Pressure up to 1.5 GPa
1990
·
J. M. Sallese
, D. Lavielle
, et al.
·
physica status solidi (a)
·
9
Adhesives in Space Environment
2018
·
Sabine Dagras
, Julien Eck
, et al.
·
Springer eBooks
·
7
Evolution of recombination in a solid HDDR processed Nd14Fe79B7 alloy
1994
·
N. Martinez
, D. G. R. Jones
, et al.
·
Journal of Applied Physics
·
7
Observation of the quantum Hall effect in planar-doped GaAs
1988
·
G Gillmann
, P Bois
, et al.
·
Semiconductor Science and Technology
·
7
PDF
Propriétés électroniques quasi-bidimensionnelles de couches épitaxiales de GaAs à dopage δ
1989
·
D. Lavielle
, J.C. Portal
, et al.
·
Revue de Physique Appliquée
·
5
Two-dimensional electrons at a GaAs-AlAs heterojunction under hydrostatic pressure
1989
·
G Gregoris
, D Lavielle
, et al.
·
Semiconductor Science and Technology
·
4
PDF
Wireless passive high-doses radiation sensor
2014
·
E Debourg
, A Rifai
, et al.
·
Proceedings of IEEE Sensors/Proceedings of IEEE Sensors ...
·
3
Chipless Passive Sensor for Wireless Monitoring of High Radiation Doses in Nuclear Infrastructures
2014
·
Pons, Patrick
, Aubert, Hervé
, et al.
·
HAL
·
3
Magnetic freeze-out study of the DX-linked shallow level in Si-doped AlxGa1-xAs under hydrostatic pressure
1991
·
A Kadri
, E Ranz
, et al.
·
Semiconductor Science and Technology
·
3
PDF
Two-dimensional persistent photoconductivity and magnetic freeze-out in lightly “δ”-doped InP
1990
·
D. Lavielle
, J.C. Portal
, et al.
·
Surface Science
·
2
Magnetotransport measurements in heterostructures
1990
·
E. Ranz
, D. Lavielle
, et al.
·
Superlattices and Microstructures
·
2
Studies of Magnetotransport Measurements of Resonant DX Centres in Heavily Doped GaAs and (AlGa)As Alloys
1989
·
J. C. Portal
, L. Dmowski
, et al.
·
Springer series in solid-state sciences
·
1
Methodology for Fingerprinting of Materials and Processes
2018
·
Coqueret, Xavier
, Ranoux, Guillaume
, et al.
·
HAL
Adhesives in Space Environment
2017
·
Sabine Dagras
, Julien Eck
, et al.
·
Springer eBooks
Development of Nano-Hybrid Transparent Polymer Films
2015
·
Volker Liedtke
, Lubos Baca
, et al.
Development of New Irradiation Facilities for Material Testing
2014
·
J. C. Eck
, D. Lavielle
, et al.
·
ESASP
Evolution of thermo-optical properties and conductivity of a white space paint in geostationary environment
2003
·
Claire Tonon
, D. Lavielle
, et al.
Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition
2002
·
M.A. di Forte-Poisson
, C. Brylinski
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
Tunable Apparition of the DX-Linked Level by Photoexcitation in AlGaAs in Magnetic Freezeout Experiments under Hydrostatic Pressure
1991
·
E. Ranz
, K. Zitouni
, et al.
·
Materials science forum
Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs
1991
·
A. Kadri
, Jean Claude Portal
, et al.
·
Materials science forum
Influence du dopage sur les propriétés de transport de semiconducteurs III-V (AlxGa1-xAs, InP) et de microstructures associées
1990
·
D. Lavielle
·
OpenGrey (Institut de l'Information Scientifique et Technique)
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Works count:
26
Citation count:
106
H-index:
7
I10-index:
4
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