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Rainer Timm

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
2021 · Zhihua Yong, Karl-Magnus Persson, et al. · Applied Surface Science · 109
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Change of InAs/GaAs quantum dot shape and composition during capping
2008 · H. Eisele, A. Lenz, et al. · Journal of Applied Physics · 109
Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory
2014 · Martin Hjort, Sebastian Lehmann, et al. · ACS Nano · 95
Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
2002 · A. Lenz, R. Timm, et al. · Applied Physics Letters · 84
Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces
2013 · M. Hjort, S. Lehmann, et al. · Nano Letters · 76
Self-Organized Formation of GaSb/GaAs Quantum Rings
2008 · R. Timm, H. Eisele, et al. · Physical Review Letters · 74
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
2014 · Dmitry B. Suyatin, Vishal Jain, et al. · Nature Communications · 72
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Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
2010 · R. Timm, A. Fian, et al. · Applied Physics Letters · 72
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
2018 · Rainer Timm, Ashley R. Head, et al. · Nature Communications · 69
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InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes
2019 · Zhaoxia Bi, Filip Lenrick, et al. · Nano Letters · 58
Structure and intermixing of GaSb∕GaAs quantum dots
2004 · R. Timm, H. Eisele, et al. · Applied Physics Letters · 57
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
2021 · Mamidala Saketh Ram, Karl-Magnus Persson, et al. · Nature Electronics · 56
Quantum ring formation and antimony segregation in GaSb∕GaAs nanostructures
2008 · R. Timm, A. Lenz, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 56
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
2015 · James L. Webb, Johan Knutsson, et al. · Nano Letters · 49
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2
2021 · Robin Athle, Anton E. O. Persson, et al. · ACS Applied Materials & Interfaces · 48
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
2012 · Jun Wu, E. Lind, et al. · Applied Physics Letters · 47
Surface Chemistry, Structure, and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires
2012 · Martin Hjort, Jesper Wallentin, et al. · ACS Nano · 46
In Vivo Detection and Absolute Quantification of a Secreted Bacterial Factor from Skin Using Molecularly Imprinted Polymers in a Surface Plasmon Resonance Biosensor for Improved Diagnostic Abilities
2019 · Gizem Ertürk Bergdahl, Tilde Andersson, et al. · ACS Sensors · 43
Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
2004 · A. Lenz, H. Eisele, et al. · Applied Physics Letters · 43
Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs
2011 · Jason K. Kawasaki, Rainer Timm, et al. · Physical Review Letters · 41
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Ablation and blow-off characteristics at 248 nm of Al, Sn and Ti targets used for thin film pulsed laser deposition
1996 · R. Timm, P. R. Willmott, et al. · Journal of Applied Physics · 41
Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies
2020 · Giulio D’Acunto, Andrea Troian, et al. · ACS Applied Electronic Materials · 40
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
2020 · Zhaoxia Bi, Taiping Lu, et al. · ACS Applied Materials & Interfaces · 38
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Direct measurement and analysis of the conduction band density of states in diluted GaAs1−xNx alloys
2010 · L. Ivanova, H. Eisele, et al. · Physical Review B · 38
Reactive crossed beam scattering of a Ti plasma and a N2 pulse in a novel laser ablation method
1997 · P. R. Willmott, R. Timm, et al. · Journal of Applied Physics · 37
Works count: 143
Citation count: 2,594
H-index: 31
I10-index: 74
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