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Ching‐Lien Hsiao

Observed names: C L Hsiao, C. L. Hsiao, C.-L. Hsiao, C.L. Hsiao, C.‐L. Hsiao, Chin Lian Hsiao, Ching-Lien Hsiao, Hsiao, C. L., Hsiao, Ching-Lien
Observed institutions: Linköping University, National Sun Yat-sen University, National Taiwan University of Science and Technology, National Taiwan University, National Tsing Hua University, National Institutes of Applied Research, National Center for Instrumentation Research, University of Houston, Tatung University
ORCID: 0000-0001-7192-0670
Observed ORCID: 0000-0001-7192-0670
OpenAlex ID: A5080576769
Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
2003 · L. W. Tu, C. L. Hsiao, et al. · Applied Physics Letters · 127
Generation of electricity in GaN nanorods induced by piezoelectric effect
2007 · W. S. Su, Y. F. Chen, et al. · Applied Physics Letters · 113
A Free‐Standing High‐Output Power Density Thermoelectric Device Based on Structure‐Ordered PEDOT:PSS
2018 · Zaifang Li, Hengda Sun, et al. · Advanced Electronic Materials · 96
Density Functional Theory-Fed Phase Field Model for Semiconductor Nanostructures: The Case of Self-Induced Core–Shell InAlN Nanorods
2024 · Manoel Alves Machado Filho, William Farmer, et al. · Crystal Growth & Design · 94
Electronic and optical properties of core–shell InAlN nanorods: a comparative study via LDA, LDA-1/2, mBJ, HSE06, G 0 W 0 and BSE methods
2024 · Ronaldo Rodrigues Pela, Ching-Lien Hsiao, et al. · Physical Chemistry Chemical Physics · 77
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Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations
2022 · Manoel Alves Machado Filho, Ching-Lien Hsiao, et al. · ACS Nanoscience Au · 64
Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
2011 · M. Junaid, C.-L. Hsiao, et al. · Applied Physics Letters · 64
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Specular Scattering Probability of Acoustic Phonons in Atomically Flat Interfaces
2009 · Yu-Chieh Wen, Chia-Lung Hsieh, et al. · Physical Review Letters · 61
Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy
2007 · Ching-Lien Hsiao, Li-Wei Tu, et al. · Applied Physics Letters · 60
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
2020 · Aditya Prabaswara, Jens Birch, et al. · Applied Sciences · 57
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Glancing Angle Deposition and Growth Mechanism of Inclined AlN Nanostructures Using Reactive Magnetron Sputtering
2020 · Samiran Bairagi, Kenneth Järrendahl, et al. · Coatings · 44
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ε-Ga2O3Grown onc-Plane Sapphire by MOCVD with a Multistep Growth Process
2022 · Yu-Hsuan Hsu, Wan-Yu Wu, et al. · Crystal Growth & Design · 41
Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
2010 · V. Darakchieva, K. Lorenz, et al. · Applied Physics Letters · 36
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Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
2005 · Ching-Lien Hsiao, Li-Wei Tu, et al. · Japanese Journal of Applied Physics · 35
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Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
2007 · Ching-Lien Hsiao, Hsu-Cheng Hsu, et al. · Applied Physics Letters · 33
Liquid-target reactive magnetron sputter epitaxy of High quality GaN(0001̄) nanorods on Si(111)
2015 · M. Junaid, Y.-T. Chen, et al. · Materials Science in Semiconductor Processing · 31
Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates
2012 · Ching-Lien Hsiao, Justinas Palisaitis, et al. · Thin Solid Films · 31
Effect of strain on low-loss electron energy loss spectra of group-III nitrides
2011 · J. Palisaitis, C.-L. Hsiao, et al. · Physical Review B · 31
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Zinc gallate (ZnGa 2 O 4 ) epitaxial thin films: determination of optical properties and bandgap estimation using spectroscopic ellipsometry
2022 · Samiran Bairagi, Ching-Lien Hsiao, et al. · Optical Materials Express · 30
Energy relaxation of InN thin films
2007 · D.-J. Jang, G.-T. Lin, et al. · Applied Physics Letters · 30
Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition
2022 · Ray-Hua Horng, Dong-Sing Wuu, et al. · Materials Today Advances · 28
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Direct observation of spinodal decomposition phenomena in InAlN alloys during in-situ STEM heating
2017 · J. Palisaitis, C.-L. Hsiao, et al. · Scientific Reports · 27
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Auger recombination in InN thin films
2008 · D.-J. Jang, G.-T. Lin, et al. · Applied Physics Letters · 27
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
2008 · Ching-Lien Hsiao, Ting-Wei Liu, et al. · Applied Physics Letters · 26
Epitaxial GaN nanorods free from strain and luminescent defects
2006 · H. W. Seo, Q. Y. Chen, et al. · Applied Physics Letters · 26
Works count: 128
Citation count: 2,147
H-index: 25
I10-index: 66
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