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Ryan Burton Lewis
Observed names:
Lewis, Ryan B.,
R B Lewis,
R. B. Lewis,
R.B. Lewis,
Ryan B Lewis,
Ryan B. Lewis,
Ryan Lewis
show all 7
Institution:
McMaster University
Observed institutions:
Dalhousie University,
University of British Columbia,
University of Victoria,
Idaho National Laboratory,
Paul Drude Institute for Solid State Electronics,
Forschungsverbund Berlin,
McMaster University
show all 7
ORCID:
0000-0002-7216-3541
Observed ORCID:
0000-0002-7216-3541
OpenAlex ID:
A5080859998
Sodium Carboxymethyl Cellulose
2006
·
Jing Li
, R. B. Lewis
, et al.
·
Electrochemical and Solid-State Letters
·
649
PDF
Composition dependence of photoluminescence of GaAs1−xBix alloys
2009
·
Xianfeng Lu
, D. A. Beaton
, et al.
·
Applied Physics Letters
·
189
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
2008
·
X. Lu
, D. A. Beaton
, et al.
·
Applied Physics Letters
·
178
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
2012
·
R. B. Lewis
, M. Masnadi-Shirazi
, et al.
·
Applied Physics Letters
·
160
Nanoplasmonic Terahertz Photoconductive Switch on GaAs
2012
·
Barmak Heshmat
, Hamid Pahlevaninezhad
, et al.
·
Nano Letters
·
111
light emitting diodes
2008
·
R.B. Lewis
, D.A. Beaton
, et al.
·
Journal of Crystal Growth
·
93
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
2012
·
N. Hossain
, I. P. Marko
, et al.
·
Applied Physics Letters
·
65
Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%
2014
·
M. Masnadi-Shirazi
, R. B. Lewis
, et al.
·
Journal of Applied Physics
·
61
Temperature dependence of hole mobility in GaAs1−xBix alloys
2010
·
D. A. Beaton
, R. B. Lewis
, et al.
·
Journal of Applied Physics
·
53
In Situ AFM Measurements of the Expansion and Contraction of Amorphous Sn-Co-C Films Reacting with Lithium
2007
·
R. B. Lewis
, A. Timmons
, et al.
·
Journal of The Electrochemical Society
·
53
PDF
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy
2011
·
M. Masnadi-Shirazi
, D.A. Beaton
, et al.
·
Journal of Crystal Growth
·
48
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
2013
·
P. M. Mooney
, K. P. Watkins
, et al.
·
Journal of Applied Physics
·
47
Anomalous Strain Relaxation in Core–Shell Nanowire Heterostructures via Simultaneous Coherent and Incoherent Growth
2016
·
Ryan B. Lewis
, Lars Nicolai
, et al.
·
Nano Letters
·
45
Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core–Shell Heterostructures
2018
·
Ryan B. Lewis
, Pierre Corfdir
, et al.
·
Nano Letters
·
44
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
2017
·
Hanno Küpers
, Abbes Tahraoui
, et al.
·
Semiconductor Science and Technology
·
29
PDF
Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources
2013
·
Barmak Heshmat
, Mostafa Masnadi‐Shirazi
, et al.
·
Advanced Optical Materials
·
25
Excitonic Aharonov–Bohm Oscillations in Core–Shell Nanowires
2018
·
Pierre Corfdir
, Oliver Marquardt
, et al.
·
Advanced Materials
·
23
Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability
2017
·
Ryan B. Lewis
, Pierre Corfdir
, et al.
·
Physical Review Letters
·
22
PDF
Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant
2017
·
Ryan B. Lewis
, Pierre Corfdir
, et al.
·
Nano Letters
·
21
PDF
Deep level defects in GaAs1−xBix/GaAs heterostructures
2011
·
Zenan Jiang
, D A Beaton
, et al.
·
Semiconductor Science and Technology
·
18
Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors
2021
·
Spencer McDermott
, Ryan B. Lewis
·
ACS Applied Nano Materials
·
17
Axial GaAs/Ga(As, Bi) nanowire heterostructures
2019
·
Miriam Oliva
, Guanhui Gao
, et al.
·
Nanotechnology
·
17
PDF
Determination of indium content of GaAs/(In,Ga)As/(GaAs) core-shell(-shell) nanowires by x-ray diffraction and nano x-ray fluorescence
2018
·
Ali Al Hassan
, R. B. Lewis
, et al.
·
Physical Review Materials
·
16
Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures
2016
·
P M Mooney
, M C Tarun
, et al.
·
Semiconductor Science and Technology
·
15
Complex dielectric function of GaAs1−xBix as a function of Bi content
2019
·
Mahsa Mahtab
, Ron Synowicki
, et al.
·
Physical Review Materials
·
14
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Works count:
73
Citation count:
2,185
H-index:
19
I10-index:
33
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