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Egon Henrique Salerno Galembeck

Observed names: E. H. S. Galembeck, Egon Henrique Salerno Galembeck, Egon Galembeck, Egon H. S. Galembeck, Egon H.S. Galembeck, Egon Henrique Galembeck, Egon Henrique Salerno, Egon henrique Salerno Galembeck
Observed institution: Centro Universitário FEI
ORCID: 0000-0002-5720-3453
Observed ORCID: 0000-0002-5720-3453
OpenAlex ID: A5081680530
Diamond layout style impact on SOI MOSFET in high temperature environment
2015 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, et al. · Microelectronics Reliability · 31
Impact of Using the Octagonal Layout for SOI MOSFETs in a High-Temperature Environment
2015 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck, et al. · IEEE Transactions on Device and Materials Reliability · 17
LCE and PAMDLE Effects From Diamond Layout for MOSFETs at High-Temperature Ranges
2021 · Egon Henrique Salerno Galembeck, Salvador Pinillos Gimenez · IEEE Transactions on Electron Devices · 14
Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment
2013 · Egon H. S. Galembeck, Christian Renaux, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 14
Differentiated Layout Styles for MOSFETs: Electrical Behavior in Harsh Environments
2023 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck · Springer eBooks · 13
New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs
2022 · Egon Henrique Salerno Galembeck, Salvador Pinillos Gimenez · IEEE Transactions on Electron Devices · 12
The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures
2021 · Egon Henrique Salerno Galembeck, Christian Renaux, et al. · IEEE Journal of the Electron Devices Society · 11
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Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment
2019 · Egon Henrique Salerno Galembeck, Denis Flandre, et al. · Journal of Integrated Circuits and Systems · 10
Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment
2017 · Egon Henrique Salerno Galembeck, Christian Renaux, et al. · IEEE Transactions on Device and Materials Reliability · 8
Electrical Behavior of Effects LCE and PAMDLE of the Ellipsoidal MOSFETs in a Huge Range of High Temperatures
2020 · Egon henrique Salerno Galembeck, Salvador Pinillos Gimenez · ECS Transactions · 7
Zero Temperature Coefficient Study Regarding the Half-Diamond Layout Style for MOSFETs
2024 · M. A. P. Peixoto, M. P. Braga de Lima, et al. · Symposium on Microelectronics Technology and Devices · 6
Impact of Temperature Effects in the Zero Temperature Coefficient of the Ellipsoidal MOSFET
2022 · M. P. Braga De Lima, M. A. P. Peixoto, et al. · Symposium on Microelectronics Technology and Devices · 5
Customized Imperialist Competitive Algorithm Methodology to Optimize Robust Miller CMOS OTAs
2022 · Egon Henrique Salerno Galembeck, Salvador Pinillos Gimenez, et al. · Electronics · 3
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(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures
2023 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck · ECS Meeting Abstracts · 1
(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures
2023 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck · ECS Transactions · 1
The First Generation of the Unconventional Layout Styles for MOSFETs
2023 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck · Springer eBooks · 1
The MOSFET
2023 · Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck · Springer eBooks · 1
The Second Generation of the Layout Styles for MOSFETs to Further Boosting the Electrical Performance of Analog MOSFETs and CMOS ICs
2021 · Egon Henrique Salerno, Gabriel Augusto da Silva, et al. · Symposium on Microelectronics Technology and Devices · 1
Boosting the Performance of MOSFET Operating Under a Huge Range of High Temperature by Using the Octagonal Layout Style
2019 · Egon Henrique Salerno Galembeck, Jacobus Swart, et al. · Symposium on Microelectronics Technology and Devices · 1
Boosting the On/Off Current Ratio of MOS Transistor Over a Wide High-Temperature Range Using Second-Generation Layout Style for MOSFETs
2026 · Egon Henrique Salerno Galembeck, Denis Flandre, et al. · IEEE Transactions on Electron Devices
Quantitative Validation of Enhanced Matching Stability in Octogonal MOSFETs Under X-ray Radiation: A Multivariate Statistical and Predic-tive Modeling Approach
2026 · Vinicius Vono Peruzzi, Gabriel Augusto da Silva, et al. · Journal of Integrated Circuits and Systems
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Drain Resistance as a Key Figure of Merit for MOSFETs Under X-Ray Ionizing Radiation: A Four-Bias Condition Analysis During the Irradiation Procedure
2026 · V.V. Peruzzi, W. R. Melo, et al. · Symposium on Microelectronics Technology and Devices
Half-Diamond MOSFETs: A Geometry-Driven RHBD Strategy with Enhanced Performance Under X-Ray TID
2026 · Egon H. S. Galembeck, Denis Flandre, et al. · Symposium on Microelectronics Technology and Devices
Unsupervised Machine Learning Applied to the Thermal Resilience Analysis of Half-Diamond MOSFETs
2026 · V. V. Peruzzi, E. H. S. Galembeck, et al. · Symposium on Microelectronics Technology and Devices
A Human–AI Co-Design Methodology for Robust and Compact Miller CMOS OTAs Using the Half-Diamond Layout Style for MOSFETs
2026 · Egon Henrique Salerno Galembeck, Rodrigo Alves De Lima Moreto, et al. · IEEE Access
Works count: 37
Citation count: 157
H-index: 8
I10-index: 8
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