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Yohei Iwahashi

Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations
2013 · Vincenzo d’Alessandro, Alessandro Magnani, et al. · Microelectronics Reliability · 36
RF‐MBE growth of cubic InN films on MgO (001) substrates
2006 · Y. Iwahashi, H. Yaguchi, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 20
3D electro-thermal simulations of wide area power devices operating in avalanche condition
2012 · M. Riccio, G. De Falco, et al. · Microelectronics Reliability · 18
Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions
2018 · Mitsuru Sometani, Mitsuo Okamoto, et al. · Japanese Journal of Applied Physics · 17
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Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
2017 · Yohei Iwahashi, Masaki Miyazato, et al. · Materials science forum · 16
Impact of gate drive voltage on avalanche robustness of trench IGBTs
2014 · M. Riccio, L. Maresca, et al. · Microelectronics Reliability · 12
Cell pitch influence on the current distribution during avalanche operation of trench IGBTs: Design issues to increase UIS ruggedness
2014 · M. Riccio, L. Maresca, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
Analysis of current distribution on IGBT under unclamped inductive switching conditions
2012 · Yohei Iwahashi, Yoshihito Mizuno, et al. · Microelectronics Reliability · 10
Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy
2005 · Hiroyuki Yaguchi, Yoshihiro Kitamura, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions
2017 · M. Sometani, M. Okamoto, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer
2019 · Teruaki Kumazawa, Mitsuo Okamoto, et al. · Materials science forum · 2
Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs
2017 · Mitsuru Sometani, Yohei Iwahashi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
High Resolution X-Ray Diffraction and Raman Scattering Studies of Cubic-Phase InN Films Grown by MBE
2008 · S. Kuntharin, S. Sanorpim, et al. · Advanced materials research · 2
Fabrication and millimeter-wave characterization of semiconductor Klystron amplifier device
2008 · Yohei Iwahashi, Masahiro Asada · International Nano-Optoelectronics Workshop · 1
Optically Triggered and Powered Gate Driver for 1.2kV, 475 A SiC MOSFET Module
2026 · Jeet Panchal, Liyang Jin, et al. · IEEE Transportation Electrification Conference and Expo
High-power Photodiode Dynamics Enabling Sub-100-ns Switching of 50-kW Power Electronics
2026 · Liyang Jin, Jeet Panchal, et al. · Conference on Lasers and Electro-Optics
Low-Temperature Slurry-Cast Copper Structures for Multiple Power Electronics 3D Packaging Applications
2025 · Sujan Dewanjee, Yohei Iwahashi, et al. · International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)
Envelope-Based Fault Detection and Identification in Three-Phase Motor Drive Systems
2025 · Qian Yang, Shailesh Joshi, et al. · IEEE Transportation Electrification Conference and Expo
Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD
2018 · Teruaki Kumazawa, Mituo Okamoto, et al. · The Japan Society of Applied Physics
Works count: 19
Citation count: 159
H-index: 9
I10-index: 9
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