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J. El Beyrouthy

Observed names: El Beyrouthy, J, El Beyrouthy, Johnny, Elbeyrouthy, J., J. Elbeyrouthy, Johnny El beyrouthy
OpenAlex ID: A5081780555
Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies
2017 · M. Seif, F. Pascal, et al. · 9
Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray
2020 · J. El Beyrouthy, B. Sagnes, et al. · European Conference on Radiation and Its Effects on Components and Systems · 5
Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
2019 · J. El Beyrouthy, A. Vauthelin, et al. · European Conference on Radiation and Its Effects on Components and Systems · 5
Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors
2023 · A. Adebabay Belie, J. El Beyrouthy, et al. · International Conference on Noise and Fluctuations · 2
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Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics
2023 · J. El Beyrouthy, B. Sagnes, et al. · European Conference on Radiation and Its Effects on Components and Systems · 2
Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node
2019 · El Beyrouthy, Johnny, Vauthelin, Alexandre, et al. · Infoscience (Ecole Polytechnique Fédérale de Lausanne) · 2
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The Impact of Irradiation on DC Characteristics and Low-Frequency Noise of Advanced SiGe:C HBTs
2024 · B. Sagnes, A. Adebabay Belie, et al. · River Publishers eBooks · 1
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Effects of X-ray and Gamma irradiation on advanced Si/SiGe:C HBTs DC characteristics
2023 · El Beyrouthy, J, Sagnes, Bruno, et al. · HAL
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Characterization and modeling of low frequencies noise in bipolar transistors developed in BiCMOS technology (55 nm node) for RF to THz applicationsés en technologie BiCMOS (nœud 55 nm) pour des applications RF et THz.
2020 · Johnny El beyrouthy · theses.fr (ABES)
Low Frequency Noise Characterization and Modeling of HBTs developed in 55 nm BiCMOS technology for three collector architectures
2019 · El Beyrouthy, Johnny, Sagnes, Bruno, et al. · HAL
Localization of 1/f noise sources in Si/SiGe:C HBTs
2018 · Seif, Marcelino, Pascal, Fabien, et al. · HAL
Works count: 12
Citation count: 26
H-index: 3
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