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Yuichi Naitou
Observed names:
Y Naitou,
Y. Naitou,
Yuichi NAITOU
Institution:
National Institute of Advanced Industrial Science and Technology
Observed institutions:
NEC (Japan),
Canon Anelva (Japan),
Anelva Corporation (Japan),
National Institute of Advanced Industrial Science and Technology,
The University of Osaka
OpenAlex ID:
A5081835669
Direct nano-patterning of graphene with helium ion beams
2015
·
Y. Naitou
, T. Iijima
, et al.
·
Applied Physics Letters
·
34
High-spatial-resolution scanning capacitance microscope using all-metal probe with quartz tuning fork
2004
·
Yuichi Naitou
, Norio Ookubo
·
Applied Physics Letters
·
28
Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy
2007
·
Y. Naitou
, A. Ando
, et al.
·
Journal of Applied Physics
·
27
Anderson localization of graphene by helium ion irradiation
2016
·
Y. Naitou
, S. Ogawa
·
Applied Physics Letters
·
22
Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness
2008
·
Hiroaki Arimura
, Naomu Kitano
, et al.
·
Applied Physics Letters
·
17
PDF
Charge trapping properties in TiO2∕HfSiO∕SiO2 gate stacks probed by scanning capacitance microscopy
2008
·
Y. Naitou
, H. Arimura
, et al.
·
Applied Physics Letters
·
16
PDF
Halo Ion Implantation Effect on Extension Profile Studied by Scanning Capacitance Microscopy Using All-Metal Probe under FM Control
2004
·
Yuichi Naitou
, Norio Ookubo
·
Japanese Journal of Applied Physics
·
12
PDF
Shear-mode scanning capacitance microscope
2001
·
Yuichi Naitou
, Norio Ookubo
·
Applied Physics Letters
·
12
Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy
2005
·
Y. Naitou
, A. Ando
, et al.
·
Applied Physics Letters
·
8
Capacitive Imaging of Graphene Flakes on SiO2 Substrate
2011
·
Yuichi Naitou
, Hisato Ogiso
·
Japanese Journal of Applied Physics
·
7
An analytical model for the capacitance between probe tip and dielectric film deduced by high-frequency electromagnetic-field simulations
2009
·
Y. Naitou
, A. Yasaka
, et al.
·
Journal of Applied Physics
·
7
Rectification of force-distance curve using capacitance measurement
2009
·
Y. Naitou
, H. Ogiso
, et al.
·
Applied Physics Letters
·
6
Scanning Capacitance Microscopy Evaluation of Lead Zirconate Titanate Film Formed by Aerosol Deposition Method
2006
·
Yuichi Naitou
, Hisato Ogiso
·
Japanese Journal of Applied Physics
·
5
PDF
Conductivity change of defective graphene by helium ion beams
2017
·
Yuichi Naitou
, Shinichi Ogawa
·
AIP Advances
·
4
Carrier accumulation and depletion in point-contact capacitance-voltage measurements
2017
·
Yuichi Naitou
·
AIP Advances
·
2
Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement
2012
·
Yuichi Naitou
·
Japanese Journal of Applied Physics
·
2
PDF
Dielectric and Interface Properties of TiO2/HfSiO/SiO2 Layered Structures Fabricated by in situ PVD Method
2008
·
Hiroaki Arimura
, Yuichi Naitou
, et al.
·
ECS Transactions
·
2
PDF
Scanning capacitance microscopy study of carrier depletion within grains of n ‐type polycrystalline silicon
2008
·
Y. Naitou
, H. Ogiso
, et al.
·
Surface and Interface Analysis
·
2
Tip-to-Sample Distance Dependence of dC/dZ Imaging in Thin Dielectric Film Measurement
2008
·
Yuichi Naitou
, Atsushi Ando
, et al.
·
Japanese Journal of Applied Physics
·
2
Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
2005
·
Meishoku Masahara
, Shinichi Hosokawa
, et al.
·
Japanese Journal of Applied Physics
·
2
PDF
Native graphene oxides at graphene edges
2012
·
S. Shimamoto
, Y. Naitou
, et al.
·
Conference on Precision Electromagnetic Measurements
·
1
Study on channel depletion in metal‐oxide‐semiconductor field effect transistor using top‐view imaging through scanning capacitance microscopy
2008
·
Y. Naitou
, H. Ogiso
, et al.
·
Surface and Interface Analysis
·
1
Correlation Between Surface Topography and Static Capacitance Image of Ultrathin SiO2 Films Evaluated by Scanning Capacitance Microscopy
2007
·
Yuichi Naitou
, Atsushi Ando
, et al.
·
Japanese Journal of Applied Physics
·
1
PDF
Application of a self-sensing conductive probe for Si device imaging
2005
·
Yuichi Naitou
, Norio Ookubo
·
Applied Surface Science
·
1
Dopant Profiling in Vertical Ultrathin Channel for Double-gate MOSFET by Scanning Nonlinear Dielectric Microscopy (SNDM)
2004
·
M. Masahara
, S. Hosokawa
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
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Works count:
36
Citation count:
222
H-index:
8
I10-index:
8
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