Author

Kiyoo Kamei

Observed name: K. Kamei

Institution: Toshiba (Japan)

Observed institutions: Toshiba (Japan), Cornell University, Toshiba (Austria)

OpenAlex ID: A5081943768

Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's

1981 · T. Nakanisi, T. Udagawa, et al. · Journal of Crystal Growth · 104

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

1983 · S. Hori, K. Kamei, et al. · IEEE Transactions on Microwave Theory and Techniques · 31

Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition

1981 · K. Kamei, H. Kawasaki, et al. · Electronics Letters · 19

Quarter micron gate low noise GaAsFET's operable up to 30 GHz

1980 · K. Kamei, S. Hori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17

Super low noise AlGaAs/GaAs HEMT with one tenth micron gate

2003 · H. Kawasaki, T. Shino, et al. · IEEE MTT-S International Microwave Symposium digest · 15

Broadband HEMT and GaAs FET Amplifiers for 18 - 26.5 GHz

2005 · K. Shibata, B. Abe, et al. · IEEE MTT-S International Microwave Symposium digest · 13

GaAs power MESFETs prepared by metalorganic chemical vapour deposition

1981 · T. Shino, S. Yanagawa, et al. · Electronics Letters · 12

Direct-Coupled GaAs Monolithic IC Amplifiers

2005 · S. Hori, K. Kamei, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 10

20 GHz-Band Low-Noise HEMT Amplifier

2005 · K. Shibata, K. Nakayama, et al. · IEEE MTT-S International Microwave Symposium digest · 8

Modulation-Doped In0.5Al0.5P/GaAs Field-Effect Transistors

1988 · Yasuo Ohba, Miyoko O. Watanabe, et al. · Japanese Journal of Applied Physics · 8

PDF

GaAs Monolithic MICs for Direct Broadcast Satellite Receivers

2005 · S. Hori, K. Kamei, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 7

Broadband HEMT Amplifier for 26.5 - 40.0 GHz

1987 · K. Shibata, B. Abe, et al. · IEEE MTT-S International Microwave Symposium digest · 7

GaAs monolithic MIC's for direct broadcast satellite receivers

1983 · S. Hori, K. Kamei, et al. · IEEE Transactions on Electron Devices · 5

Ka-band 1 watt power GaAs MMICs

2003 · Y. Oda, S. Arai, et al. · IEEE MTT-S International Microwave Symposium digest · 4

GaAs low-noise MESFET prepared by metal-organic chemical vapor deposition

1979 · K. Kamei, M. Tatematsu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4

High efficiency CW transferred-electron oscillator with optimized doping profile

1976 · K. Kamei, L.F. Eastman · IEEE Transactions on Electron Devices · 4

GaAs Monolithic MIC Mixer-IF Amplifiers for Direct Broadcast Satellite Receivers

1984 · S. Watanabe, J. Ozaki, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 3

Modulation-Doped In_ Al_ P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices

1988 · Yasuo Ohba, Miyoko Watanabe, et al. · Japanese Journal of Applied Physics · 2

A high efficiency CW transferred-electron oscillator with optimized doping profile

1974 · K. Kamei, L. F. Eastman · Technical digest - International Electron Devices Meeting/Technical digest · 2

GaAs Monolithic MICs for Direct Broadcast Satellite Receivers

2005 · S. Hori, K. Kamei, et al. · IEEE MTT-S International Microwave Symposium digest · 1

The Simulation of a Gunn Diode with Temperature Effects

1972 · Kiyoo Kamei, Yoshio Nishi · Japanese Journal of Applied Physics · 1

PDF

Works count: 21

Citation count: 277

H-index: 8

I10-index: 8