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In-Jun Jung
Observed names:
In Jun Jung,
In Jung,
Jung, In-Jun
Institutions:
Korea Advanced Institute of Science and Technology,
Yonsei University
Observed institutions:
Korea Advanced Institute of Science and Technology,
Yonsei University,
Samsung Electronics (South Korea),
Sungkyunkwan University
ORCID:
0000-0002-3228-3725
Observed ORCID:
0000-0002-3228-3725
OpenAlex ID:
A5082265623
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling
2022
·
Keonhee Cho
, Heekyung Choi
, et al.
·
IEEE Journal of Solid-State Circuits
·
21
An Offset-Canceled Sense Amplifier for DRAMs With Hidden Offset-Cancellation Time and Boosted Internal-Voltage-Difference
2023
·
In-Jun Jung
, Tae-Hyun Kim
, et al.
·
IEEE Transactions on Circuits & Systems II Express Briefs
·
15
Computing-In-Memory Using 1T1C Embedded DRAM Cell with Micro Sense Amplifier for Enhancing Throughput
2022
·
Do-Yoon Lim
, In-Jun Jung
, et al.
·
IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)
·
13
A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes
2023
·
In-Jun Jung
, Do Han Kim
, et al.
·
IEEE Transactions on Circuits & Systems II Express Briefs
·
8
A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array
2021
·
Tae-Hyun Kim
, Byungkyu Song
, et al.
·
IEEE Transactions on Circuits and Systems I Regular Papers
·
7
Dual-Input Stacked Inverter-Based Single-Ended DRAM Sense Amplifier Using BL Switches for Low-Power High-Speed Sensing
2024
·
Sehee Lim
, In Jun Jung
, et al.
·
IEEE Journal of Solid-State Circuits
·
5
A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing
2025
·
Do-Yoon Lim
, Sehee Lim
, et al.
·
IEEE Journal of Solid-State Circuits
·
2
A Contention-Free Wordline Supporting Circuit for High Wordline Resistance in Sub-10-nm SRAM Designs
2024
·
Tae-Hyun Kim
, Juhyun Park
, et al.
·
IEEE Transactions on Circuits & Systems II Express Briefs
·
2
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased with Technology Scaling
2021
·
Keonhee Cho
, Heekyung Choi
, et al.
·
Symposium on VLSI Circuits
·
2
D3TA: 38.9TOPS/W Transformer Accelerator with Dual-Port 3T-eDRAM Digital Compute-in-Memory Using HyperAttention and Triple-Sparsity-Handling
2025
·
Donghyuk Kim
, In-Jun Jung
, et al.
·
1
High-Precision and Low-Power Offset Canceling Tri-State Sensing Latch in NAND Flash Memory
2023
·
Taeyun Lee
, In-Jun Jung
, et al.
·
IEEE Transactions on Circuits & Systems II Express Briefs
·
1
NOVA: Technology-Architecture Co-Design of Near-Memory Processing for Attention-SSM-MoE Hybrid LLM Inference
2026
·
Jung, In-Jun
, Min, Jaeha
, et al.
·
arXiv (Cornell University)
PDF
3DLS: A 3D Logic-Stacked Architecture for Disaggregated LLM Serving
2026
·
Jaehun Lee
, In-Jun Jung
, et al.
·
IEEE Computer Architecture Letters
PDF
A Wide-Range and Energy-Efficient Level Shifter With Robust Leakage-Suppressed Pull-Down Network
2026
·
Donghan Ko
, Giseok Kim
, et al.
·
IEEE Transactions on Circuits and Systems I Regular Papers
HLX: A Unified Pipelined Architecture for Optimized Performance of Hybrid Transformer-Mamba Language Models
2025
·
In-Jun Jung
, Gyeongrok Yang
, et al.
·
IEEE/ACM International Symposium on Microarchitecture (MICRO)
PDF
A power-efficient search line driver for 3T-2R non-volatile ternary content addressable memory with power gating and replica cell
2018
·
In Jung
, Kee-Won Kwon
·
International Conference on Electronics, Information, and Communication (ICEIC)
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Works count:
16
Citation count:
77
H-index:
5
I10-index:
3
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