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Sandhyarani Sahoo

Observed name: Sahoo, Sandhyarani
ORCID: 0000-0002-9842-2281
Observed ORCID: 0000-0002-9842-2281
OpenAlex ID: A5082498909
Bipolar Resistive Switching in TiO 2 Artificial Synapse Mimicking Pavlov’s Associative Learning
2023 · Anjan Kumar Jena, Mousam Charan Sahu, et al. · ACS Applied Materials & Interfaces · 111
Reconfigurable Low-Power TiO 2 Memristor for Integration of Artificial Synapse and Nociceptor
2023 · Mousam Charan Sahu, Anjan Kumar Jena, et al. · ACS Applied Materials & Interfaces · 83
Multifunctional 2D MoS 2 Optoelectronic Artificial Synapse with Integrated Arithmetic and Reconfigurable Logic Operations for In‐Memory Neuromorphic Computing Applications
2022 · Mousam Charan Sahu, Sandhyarani Sahoo, et al. · Advanced Materials Technologies · 76
Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor
2021 · Sameer Kumar Mallik, Sandhyarani Sahoo, et al. · Journal of Applied Physics · 30
Electronic bandstructure modulation of MoX2/ZnO(X:S,Se) heterostructure by applying external electric field
2022 · Neha Kapila Sharma, Sandhyarani Sahoo, et al. · Surfaces and Interfaces · 26
Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device
2021 · Mousam Charan Sahu, Sameer Kumar Mallik, et al. · The Journal of Physical Chemistry Letters · 26
Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX2/WX2 (X = S, Se) Heterostructures
2021 · Sandhyarani Sahoo, Mousam Charan Sahu, et al. · The Journal of Physical Chemistry C · 21
Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer $$WS_2$$
2022 · Anjan Kumar Jena, Sameer Kumar Mallik, et al. · Scientific Reports · 18
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High Responsivity in Monolayer MoS2 Photodetector via Controlled Interfacial Carrier Trapping
2023 · Sandhyarani Sahoo, Mousam Charan Sahu, et al. · ACS Applied Electronic Materials · 17
Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering
2022 · Anjan Kumar Jena, Mousam Charan Sahu, et al. · Applied Physics A · 15
Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy
2020 · Sandhyarani Sahoo, Sameer Kumar Mallik, et al. · Nanotechnology · 14
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Resonance Raman Process and Exciton Engineering in MoS2-WS2 Vertical Heterostructure
2025 · Ashis Kumar Panigrahi, Sandhyarani Sahoo, et al. · The Journal of Physical Chemistry C · 12
Transition metal substituted MoS2/WS2 van der Waals heterostructure for realization of dilute magnetic semiconductors
2022 · Sameer Kumar Mallik, Anjan Kumar Jena, et al. · Journal of Magnetism and Magnetic Materials · 12
Polarized Moiré Phonon and Strain-Coupled Phonon Renormalization in Twisted Bilayer MoS2
2022 · Sameer Kumar Mallik, Sandhyarani Sahoo, et al. · The Journal of Physical Chemistry C · 10
Direct Transfer of Monolayer MoS2 Device Arrays for Potential Applications in Flexible Electronics
2024 · Sameer Kumar Mallik, Roshan Padhan, et al. · ACS Applied Nano Materials · 9
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Pulse Tunable Quantum Conductance States in Oxygen Vacancy Engineered TiO2−Δx Memristor for Artificial Neural Network Applications
2025 · Mousam Charan Sahu, Partha Sarathi Padhi, et al. · ACS Applied Electronic Materials · 1
Fast transient charge trapping in salt-aided CVD synthesized monolayer MoS2 field-effect transistor
2020 · Mallik, Sameer Kumar, Sahoo, Sandhyarani, et al. · arXiv (Cornell University)
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Works count: 18
Citation count: 481
H-index: 12
I10-index: 14
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