Author

D.E. Ioannou

Observed names: D E Ioannou, D Ioannou, D. E. Ioannou, D. Ioannou, Dimitris E. Ioannou, Dimitris Ioannou

Observed institutions: Institut polytechnique de Grenoble, United States Naval Research Laboratory, Centre National de la Recherche Scientifique, National Institute of Standards and Technology, IBM (United States), George Mason University, Université Joseph Fourier, University of Maryland, College Park

ORCID: 0000-0003-3831-9378

Observed ORCID: 0000-0003-3831-9378

OpenAlex ID: A5082528426

Influence of Metal–MoS 2 Interface on MoS 2 Transistor Performance: Comparison of Ag and Ti Contacts

2014 · Hui Yuan, Guangjun Cheng, et al. · ACS Applied Materials & Interfaces · 115

Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

2016 · Zakariae Chbili, Asahiko Matsuda, et al. · IEEE Transactions on Electron Devices · 94

Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

1991 · T. Ouisse, S. Cristoloveanu, et al. · IEEE Transactions on Electron Devices · 91

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

2013 · Hao Zhu, Curt A. Richter, et al. · Scientific Reports · 88

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A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

2011 · S. Krishnan, U. Kwon, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 83

Characterization of carrier generation in enhancement-mode SOI MOSFET's

1990 · D.E. Ioannou, S. Cristoloveanu, et al. · IEEE Electron Device Letters · 81

Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies

2006 · Akram A. Salman, Stephen G. Beebe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 72

Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's

1991 · B. Mazhari, S. Cristoloveanu, et al. · IEEE Transactions on Electron Devices · 70

SOI Field-Effect Diode DRAM Cell: Design and Operation

2013 · Ahmad Z. Badwan, Zakariae Chbili, et al. · IEEE Electron Device Letters · 56

Silicon nanowire on oxide/nitride/oxide for memory application

2007 · Qiliang Li, Xiaoxiao Zhu, et al. · Nanotechnology · 45

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Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs

1992 · S. Cristoloveanu, S.M. Gulwadi, et al. · IEEE Electron Device Letters · 43

Nickel nanoparticle deposition at room temperature for memory applications

2007 · E. Verrelli, D. Tsoukalas, et al. · Microelectronic Engineering · 35

Design and optimization of the SOI field effect diode (FED) for ESD protection

2008 · Yang Yang, Akram A. Salman, et al. · Solid-State Electronics · 32

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

2016 · Zakariae Chbili, Kin P. Cheung, et al. · Materials science forum · 31

Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis

2018 · Vasileia Georgiou, Dmitry Veksler, et al. · Advanced Functional Materials · 30

High-performance room-temperature TiO2-functionalized GaN nanowire gas sensors

2019 · Chen Shi, Asha Rani, et al. · Applied Physics Letters · 29

Surface potential at threshold in thin-film SOI MOSFET's

1993 · B. Mazhari, D.E. Ioannou · IEEE Transactions on Electron Devices · 29

Deep states in silicon-on-insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

1988 · P. K. McLarty, D. E. Ioannou, et al. · Applied Physics Letters · 29

Effect of Floating-Body and Stress Bias on NBTI and HCI on 65-nm SOI pMOSFETs

2008 · R. Mishra, D.E. Ioannou, et al. · IEEE Electron Device Letters · 27

Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's

1994 · S.P. Sinha, A. Zaleski, et al. · IEEE Transactions on Electron Devices · 26

SOI FED-SRAM Cell: Structure and Operation

2015 · Ahmad Z. Badwan, Zakariae Chbili, et al. · IEEE Transactions on Electron Devices · 25

Non-volatile memory with self-assembled ferrocene charge trapping layer

2013 · Hao Zhu, Christina A. Hacker, et al. · Applied Physics Letters · 25

Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs

2002 · J Pretet, D Ioannou, et al. · Solid-State Electronics · 25

Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications

1998 · D.E. Ioannou, F.L. Duan, et al. · IEEE Transactions on Electron Devices · 25

Bulk traps in ultrathin SIMOX MOSFET's by current DLTS

1988 · P.K. McLarty, D.E. Ioannou, et al. · IEEE Electron Device Letters · 25

Works count: 135

Citation count: 1,752

H-index: 25

I10-index: 45