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Author

Ya-Xun Lin

ORCID: 0000-0002-2510-6042
Observed ORCID: 0000-0002-2510-6042
OpenAlex ID: A5083017486
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height
2023 · Ya-Xun Lin, Der-Sheng Chao, et al. · Solid-State Electronics · 11
Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD
2024 · Xiaochen Yu, Ya-Xun Lin, et al. · IEEE Open Journal of Power Electronics · 9
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation
2023 · Ya-Xun Lin, Der-Sheng Chao, et al. · Microelectronics Reliability · 8
High-Power Dual-Band RF Rectifier With Multifocus GaN Techniques for WPT Applications
2025 · Xiaochen Yu, Haoran Wang, et al. · IEEE Transactions on Microwave Theory and Techniques · 4
High-Power Quasi-Vertical Gan Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
2025 · Xiaochen Yu, Ya-Xun Lin, et al. · IEEE MTT-S International Microwave Symposium digest · 3
Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias
2024 · Ya-Xun Lin, Der-Sheng Chao, et al. · IEEE Transactions on Electron Devices · 2
900 MHz RF Power Rectifier Based on Ultra-low Turn-on Voltage Quasi-vertical GaN Schottky Diode
2024 · Xiaochen Yu, Ya-Xun Lin, et al. · IEEE Wireless Power Technology Conference and Expo (WPTCE) · 2
Alleviating high temperature magnesium implanted radiation damage of GaN through nitrogen plasma surface treatment
2025 · Ya-Xun Lin, Der-Sheng Chao, et al. · Journal of Physics D Applied Physics · 1
Comprehensive characterization of reactor-spectrum neutron-induced defects and thermal recovery behavior in n-type 4H-SiC
2026 · Der-Sheng Chao, Ya-Xun Lin, et al. · Journal of Nuclear Materials
Works count: 9
Citation count: 40
H-index: 4
I10-index: 1
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