Author

Markus Bosund

Observed names: Bosund, Markus, M. Bosund, MARKUS BOSUND

Institution: Beneq (Finland)

Observed institutions: Beneq (Finland), Skyworks Solutions (United States), Aalto University

OpenAlex ID: A5083365543

Properties of AlN grown by plasma enhanced atomic layer deposition

2011 · Markus Bosund, Timo Sajavaara, et al. · Applied Surface Science · 126

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

2014 · Matti Putkonen, Markus Bosund, et al. · Thin Solid Films · 84

Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers

2017 · Raul Zazpe, Jan Prikryl, et al. · Langmuir · 65

Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid

2008 · Sari Vilhunen, Markus Bosund, et al. · Separation and Purification Technology · 52

HOR Activity of Pt-TiO 2-Y at Unconventionally High Potentials Explained: The Influence of SMSI on the Electrochemical Behavior of Pt

2020 · Timon N. Geppert, Markus Bosund, et al. · Journal of The Electrochemical Society · 48

GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

2010 · M. Bosund, P. Mattila, et al. · Applied Surface Science · 48

Ytterbium-doped fibers fabricated with atomic layer deposition method

2012 · Joan J. Montiel i Ponsoda, Lars Norin, et al. · Optics Express · 43

Atomic layer deposition of ytterbium oxide using -diketonate and ozone precursors

2009 · M. Bosund, K. Mizohata, et al. · Applied Surface Science · 24

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

2014 · Suvi Särkijärvi, Sakari Sintonen, et al. · Journal of Crystal Growth · 20

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

2012 · H. Jussila, P. Mattila, et al. · Applied Physics Letters · 20

Passivation of GaAs surface by atomic-layer-deposited titanium nitride

2008 · M. Bosund, A. Aierken, et al. · Applied Surface Science · 19

Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2011 · Alexander Perros, Markus Bosund, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 14

Tribological properties of thin films made by atomic layer deposition sliding against silicon

2017 · Lauri Kilpi, Oili M. E. Ylivaara, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 12

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

2012 · P. Mattila, M. Bosund, et al. · Journal of Applied Physics · 10

Control of Eu Oxidation State in Y2O3−xSx:Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study

2019 · José Rosa, Jonas Deuermeier, et al. · Materials · 8

ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION

2011 · DAN XIE, TINGTING FENG, et al. · Journal of Advanced Dielectrics · 6

Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

2014 · P. Mattila, M. Bosund, et al. · Applied Surface Science · 5

Comparative study and characterization of atomic layer deposition Al2O3 films as metal-insulator-metal capacitor dielectric for GaAs hetero-junction bipolar transistor technology

2019 · Jiro Yota, Mehran Janani, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 4

Rotary Spatial Plasma Enhanced Atomic Layer Deposition — An enabling manufacturing technology for µm-thick ALD films

2017 · Sami Sneck, Mikko Soderlund, et al. · China Semiconductor Technology International Conference (CSTIC) · 2

Effect of atomic‐layer‐deposited AlN on near‐surface InGaAs/GaAs structures

2012 · Päivi Mattila, Markus Bosund, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1

Erratum to “GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride” [Appl. Surf. Sci. 256 (2010) 7434–7437]

2010 · M. Bosund, P. Mattila, et al. · Applied Surface Science · 1

Development of Atomic Layer Deposition Processes for Nanotechnology Applications

2018 · Markus Bosund

Atomikerroskasvatusprosessien kehittäminen nanoteknologisiin sovelluksiin.

2018 · Bosund, Markus · Aaltodoc (Aalto University)

Tribological properties of atomic layer deposited thin films against silicon

2016 · Lauri Kilpi, Oili Ylivaara, et al.

ALD deposition of core-shell structures onto electrospun carbon webs for PEM fuel cell MEAs

2015 · Pirjo Heikkilä, Putkonen Matti, et al.

Works count: 32

Citation count: 612

H-index: 12

I10-index: 14