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Dmitrii D. Firsov

Observed names: D D Firsov, D. D. Firsov, D. Firsov, D.D. FIRSOV, D.D. Firsov, Dmitrii Firsov, Dmitriy D. Firsov, Dmitry D. Firsov, Dmitry Firsov, Firsov D. D., Firsov D.D., Firsov, D.D., Firsov, Dmitrii, Firsov, Dmitry, Д. Д. ФИРСОВ, Д.Д. Фирсов
ORCID: 0000-0001-7608-9580
Observed ORCID: 0000-0001-7608-9580
OpenAlex ID: A5083439906
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
2020 · Sergey V. Sorokin, Pavel S. Avdienko, et al. · Materials · 33
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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range
2016 · D D Firsov, O S Komkov, et al. · Journal of Physics D Applied Physics · 29
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Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters
2018 · S.V. Ivanov, M.Yu. Chernov, et al. · Progress in Crystal Growth and Characterization of Materials · 24
Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method
2013 · D. D. Firsov, O. S. Komkov · Technical Physics Letters · 23
Temperature- and Size-Dependent Photoluminescence of CuInS2 Quantum Dots
2023 · Oleg Korepanov, Dmitriy Kozodaev, et al. · Nanomaterials · 20
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Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots
2022 · Oleg Korepanov, Olga Aleksandrova, et al. · Nanomaterials · 20
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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
2022 · Mikhail O. Petrushkov, Demid S. Abramkin, et al. · Nanomaterials · 19
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InSb/InAs/InGa(Al)As/GaAs(0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm
2017 · M.Yu. Chernov, O.S. Komkov, et al. · Journal of Crystal Growth · 19
Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells
2017 · Mikhail Yu. Chernov, Victor A. Solov’ev, et al. · Applied Physics Express · 17
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Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate
2022 · Vyacheslav A. Timofeev, Vladimir I. Mashanov, et al. · Applied Surface Science · 14
Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy
2020 · O. S. Komkov, S. A. Khakhulin, et al. · Semiconductors · 14
Photoreflectance of indium antimonide
2016 · O. S. Komkov, D. D. Firsov, et al. · Physics of the Solid State · 14
Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures
2017 · O S Komkov, D D Firsov, et al. · Journal of Physics D Applied Physics · 13
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Evaluation of nitrogen incorporation into bulk 4H-SiC grown on seeds of different orientation from optical absorption spectra
2016 · D D Firsov, O S Komkov, et al. · Journal of Physics Conference Series · 11
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Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra
2013 · O. S. Komkov, D. D. Firsov, et al. · Semiconductors · 10
Optical Properties of Epitaxial Al x In1−x Sb Alloy Layers
2011 · O. S. Komkov, A. N. Semenov, et al. · Semiconductors · 10
Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers
2024 · Vyacheslav Timofeev, Ilya Skvortsov, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 9
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range
2016 · V. A. Solov’ev, M. Yu. Chernov, et al. · Technical Physics Letters · 9
Epitaxial growth of peculiar GeSn and SiSn nanostructures using a Sn island array as a seed
2021 · Vyacheslav Timofeev, Vladimir Mashanov, et al. · Applied Surface Science · 8
Infrared photoreflectance of InSb-based two-dimensional nanostructures
2019 · D. D. Firsov, O. S. Komkov, et al. · Journal of the Optical Society of America B · 8
Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells
2023 · Vyacheslav A. Timofeev, Vladimir I. Mashanov, et al. · Materials Today Physics · 7
Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots
2024 · Vyacheslav Timofeev, Ilya Skvortsov, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 6
Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide
2020 · M. Yu. Chernov, V. A. Solov’ev, et al. · Journal of Applied Physics · 6
Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures
2019 · V. A. Solov’ev, M. Yu. Chernov, et al. · Journal of Experimental and Theoretical Physics Letters · 6
Determination of InSb/AlInSb quantum well energy spectrum
2014 · M S Mironova, O S Komkov, et al. · Journal of Physics Conference Series · 6
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Works count: 90
Citation count: 414
H-index: 13
I10-index: 16
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