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Rakesh Aluguri

Observed names: Aluguri Rakesh, R Aluguri, R. Aluguri, RAKESH ALUGURI
ORCID: 0000-0003-2261-8023
Observed ORCID: 0000-0003-2261-8023
OpenAlex ID: A5083465914
Metal oxide resistive switching memory: Materials, properties and switching mechanisms
2017 · D. Kumar, R. Aluguri, et al. · Ceramics International · 187
Notice of Violation of IEEE Publication Principles: Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
2016 · Rakesh Aluguri, Tseung-Yuen Tseng · IEEE Journal of the Electron Devices Society · 122
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
2017 · Dayanand Kumar, Rakesh Aluguri, et al. · Applied Physics Letters · 77
Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications
2020 · Sailesh Rajasekaran, Firman Mangasa Simanjuntak, et al. · ACS Applied Electronic Materials · 51
Dielectric and transport properties of carbon nanotube-CdS nanostructures embedded in polyvinyl alcohol matrix
2009 · S. P. Mondal, R. Aluguri, et al. · Journal of Applied Physics · 39
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
2018 · Dayanand Kumar, Rakesh Aluguri, et al. · Nanotechnology · 37
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
2018 · Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, et al. · Thin Solid Films · 35
One bipolar transistor selector - One resistive random access memory device for cross bar memory array
2017 · R. Aluguri, D. Kumar, et al. · AIP Advances · 35
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Optical and electrical properties of undoped and doped Ge nanocrystals
2012 · Samaresh Das, Rakesh Aluguri, et al. · Nanoscale Research Letters · 34
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One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
2019 · Dayanand Kumar, Rakesh Aluguri, et al. · IEEE Transactions on Electron Devices · 33
Optical photoresponse of CuS–n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching
2013 · Ajit K. Katiyar, Arun Kumar Sinha, et al. · Physical Chemistry Chemical Physics · 31
Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices
2015 · R. Bar, R. Aluguri, et al. · Applied Physics Letters · 24
Characteristics of flexible and transparent Eu 2 O 3 resistive switching memory at high bending condition
2018 · R Aluguri, R Sailesh, et al. · Nanotechnology · 22
Temperature dependent photoluminescence and electroluminescence characteristics of core-shell Ge–GeO 2 nanowires
2015 · S Manna, A Katiyar, et al. · Journal of Physics D Applied Physics · 18
Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si
2012 · R. Aluguri, S. Das, et al. · Current Applied Physics · 16
Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions
2015 · S Manna, R Aluguri, et al. · Nanotechnology · 15
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Emission characteristics of self-assembled strained Ge 1−x Sn x islands for sources in the optical communication region
2017 · Rajshekhar Bar, Ajit K Katiyar, et al. · Nanotechnology · 11
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Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots
2013 · S. Das, S. Manna, et al. · Journal of Applied Physics · 11
Role of Al 2 O 3 thin layer on improving the resistive switching properties of Ta 5 Si 3 -based conductive bridge random accesses memory device
2018 · Dayanand Kumar, Rakesh Aluguri, et al. · Japanese Journal of Applied Physics · 10
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MBE-grown Si and Si1−xGexquantum dots embedded within epitaxial Gd2O3on Si(111) substrate for floating gate memory device
2013 · S Manna, R Aluguri, et al. · Nanotechnology · 9
Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate
2014 · R. Aluguri, S. Manna, et al. · Journal of Applied Physics · 7
Direct band gap optical emission from compressively strained Ge films grown on relaxed Si0.5Ge0.5 substrate
2013 · R. Aluguri, S. Manna, et al. · Applied Physics Letters · 7
Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si_05Ge_05 virtual substrates
2013 · Santanu Manna, Rakesh Aluguri, et al. · Optics Express · 6
Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix
2012 · R. Aluguri, S. Das, et al. · Optical Materials · 6
Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures
2012 · Sounak K Ray, Debashis Panda, et al. · Journal of Experimental Nanoscience · 3
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Works count: 36
Citation count: 855
H-index: 15
I10-index: 19
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