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Fernando José da Costa

Observed names: F. J. da Costa, Fernando J. Costa, Fernando Jose Costa, Fernando José Costa
Observed institution: Centro Universitário FEI
ORCID: 0000-0002-4581-3270
Observed ORCID: 0000-0002-4581-3270
OpenAlex ID: A5083812090
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors
2021 · Nilton Graziano, Fernando J. Costa, et al. · Solid-State Electronics · 9
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
2021 · Fernando J. Costa, Renan Trevisoli, et al. · Solid-State Electronics · 8
UTBB Thermal Coupling Analysis in Technological Node Level
2020 · Fernando José Costa, Renan Trevisoli Doria, et al. · Journal of Integrated Circuits and Systems · 6
Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors
2023 · Fernando José da Costa, Renan Trevisoli, et al. · IEEE Journal of the Electron Devices Society · 5
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Analysis of the Output Conductance Degradation With the Substrate Bias in SOI UTB and UTBB Transistors
2018 · Fernando J. Costa, Renan Trevisoli, et al. · Symposium on Microelectronics Technology and Devices · 5
Analysis of the substrate bias effect on the thermal properties of SOI UTBB transistors
2017 · Fernando J. Costa, Marcelo A. Pavanello, et al. · Symposium on Microelectronics Technology and Devices · 5
Cross-coupling effects in common-source current mirrors composed by UTBB transistors
2022 · Fernando José da Costa, Renan Trevisoli, et al. · Solid-State Electronics · 3
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
2020 · Fernando José Costa, Renan Trevisoli Doria, et al. · Journal of Integrated Circuits and Systems · 3
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Correlation Between the Electric Field and the Negative Temperature Bias Instabilities Degradation in Junctionless Nanowire Transistors
2019 · N. Graziano, F. J. da Costa, et al. · Symposium on Microelectronics Technology and Devices · 3
Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance
2024 · Fernando José da Costa, Aseel Zeinati, et al. · IEEE Journal of the Electron Devices Society · 2
Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements
2023 · Fernando J. Costa, Aseel Zeinati, et al. · Symposium on Microelectronics Technology and Devices · 2
Correlation between the NBTI Effect and the Interface Traps Density in Junctionless Nanowire Transistors
2020 · N. Graziano, F. J. da Costa, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 2
Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors
2019 · Fernando J. Costa, Renan Trevisoli, et al. · Symposium on Microelectronics Technology and Devices · 2
Characterization of Switching Properties in ReRAM Devices by the Capacitance of the MIM Structure
2024 · Fernando Jose Costa, Aseel Zeinati, et al. · Journal of Integrated Circuits and Systems · 1
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Standard MOS Diodes Composed by SOI UTBB Transistors
2022 · Fernando J. Costa, Renan Trevisoli, et al. · Symposium on Microelectronics Technology and Devices · 1
Ultra-Low-Power Diodes Composed by SOI UTBB Transistors
2022 · Fernando J. Costa, Renan Trevisoli, et al. · IEEE Latin American Electron Devices Conference (LAEDC) · 1
SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes
2022 · Fernando J. Costa, Renan Trevisoli, et al. · IEEE Latin American Symposium on Circuits and Systems (LASCAS) · 1
Fabrication and Electrical Characterization of Switchable Resistive Random-Access Memories
2026 · Fernando J. Costa, Renan Trevisoli, et al. · Symposium on Microelectronics Technology and Devices
Simulation-Based Study of Dickson Charge Pump Circuits Using Diode-Mode UTBB SOI Transistors: From Body Biasing Effects to Power Delivery
2026 · Ewerton Teixeira da Fonte, Fernando J. Costa, et al. · Journal of Integrated Circuits and Systems
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Physical Insights of Dickson Charge Pumping Circuits Composed of SOI UTBB Transistors
2025 · Fernando J. Costa, E. T. Fonte, et al. · Symposium on Microelectronics Technology and Devices
(Invited) Reliability in Ultimate CMOS Compatible Devices
2025 · Rodrigo Trevisoli Doria, Ewerton Teixeira Fonte, et al. · ECS Meeting Abstracts
Experimental Analysis of HfO2/X ReRAM devices by the Capacitance Measurements
2023 · Fernando J. Costa, Aseel Zeinati, et al. · IEEE Latin American Electron Devices Conference (LAEDC)
Thermal Cross-Coupling Effects Analysis in UTBB Transistors
2020 · Fernando J. Costa, Renan Trevisoli, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors
2020 · Fernando J. Costa, Renan Trevisoli, et al. · IEEE Latin American Electron Devices Conference (LAEDC)
Works count: 24
Citation count: 59
H-index: 5
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