Author

Norzaini Zainal

Observed names: N Zainal, N. Zainal, Zainal, N., Zainal, Norzaini, Zainal,, N.

Observed institutions: Universiti Sains Islam Malaysia, Universiti Sains Malaysia, University of Nottingham, Ferdinand-Braun-Institut, Universiti Teknologi MARA System, Universiti Teknologi MARA

ORCID: 0000-0003-1306-2828

Observed ORCID: 0000-0003-1306-2828

OpenAlex ID: A5084291587

Review of Open Cavity Random Lasers as Laser-Based Sensors

2022 · Atiqah Nabieha Azmi, Wan Zakiah Wan Ismail, et al. · ACS Sensors · 50

Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

2010 · S. V. Novikov, N. Zainal, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 33

Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes

2010 · N. Zainal, S. V. Novikov, et al. · Applied Physics Letters · 25

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

2009 · S.V. Novikov, C.R. Staddon, et al. · Journal of Crystal Growth · 24

Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

2015 · Way Foong Lim, Hock Jin Quah, et al. · Journal of Alloys and Compounds · 23

SiO2 Capped-ZnO nanorods for enhanced random laser emission

2021 · Abdullah Taha Ali, W. Maryam, et al. · Optics & Laser Technology · 22

UV random laser in aluminum-doped ZnO nanorods

2021 · Abdullah Taha Ali, W. Maryam, et al. · Journal of the Optical Society of America B · 19

Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics

2009 · D Moss, A V Akimov, et al. · Journal of Physics D Applied Physics · 18

Growth modification via indium surfactant for InGaN/GaN green LED

2023 · M Ikram Md Taib, M A Ahmad, et al. · Semiconductor Science and Technology · 15

Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys

2015 · Hock Jin Quah, Way Foong Lim, et al. · Arabian Journal of Chemistry · 15

GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth

2021 · M. Ikram Md Taib, S.N. Waheeda, et al. · Vacuum · 14

Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

2018 · Mohd Nazri Abd Rahman, Ahmad Shuhaimi, et al. · Superlattices and Microstructures · 14

Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers

2014 · S.N. Waheeda, N. Zainal, et al. · Applied Surface Science · 14

Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

2014 · Muhamad Ikram Md Taib, Norzaini Zainal, et al. · Journal of Nanomaterials · 14

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Nanoporous InGaN of high In composition prepared by KOH electrochemical etching

2013 · R. Radzali, N. Zainal, et al. · Materials Science in Semiconductor Processing · 14

Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact

2019 · N. Zainal, M.A. Ahmad, et al. · Superlattices and Microstructures · 13

Structural and optical characteristics of porous InAlGaN prepared by photoelectrochemical etching

2014 · R. Radzali, Z. Hassan, et al. · Journal of Alloys and Compounds · 13

Fabrication and characterization of copper doped zinc oxide by using Co-sputtering technique

2017 · A.S. Yusof, Z. Hassan, et al. · Materials Research Bulletin · 12

Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

2020 · Mohd Nazri Abd Rahman, Yusnizam Yusuf, et al. · CrystEngComm · 11

Electrochemical growth of controlled tip shapes of ZnO nanorod arrays on silicon substrate and enhanced photoluminescence emission from nanopyramid arrays compared with flat-head nanorods

2017 · Mahmoud Alimanesh, Z. Hassan, et al. · Optical Materials · 10

Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

2016 · A. Ariff, N. Zainal, et al. · Superlattices and Microstructures · 10

Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN

2015 · E. Azimah, N. Zainal, et al. · Superlattices and Microstructures · 10

Characteristics of porous GaN prepared by KOH photoelectrochemical etching

2014 · R. Radzali, N. Zainal, et al. · Materials Research Innovations · 10

Nanoporous InGaN prepared by KOH electrochemical etching with different light sources

2014 · R. Radzali, Z. Hassan, et al. · Microelectronic Engineering · 10

Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN

2011 · N. Zainal, S.V. Novikov, et al. · Physica B Condensed Matter · 10

Works count: 108

Citation count: 636

H-index: 14

I10-index: 25