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Author

Kazuhisa Ikeda

ORCID: 0009-0008-6883-9837
Observed ORCID: 0009-0008-6883-9837
OpenAlex ID: A5084512690
Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy
2023 · Tomotaka Murata, Kazuhisa Ikeda, et al. · physica status solidi (b) · 9
Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device
2024 · Kazuhisa Ikeda, Shahzeb Malik, et al. · physica status solidi (b) · 6
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Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures
2026 · Sawaki Sato, Yusuke Wakamoto, et al. · Applied Physics Letters · 5
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Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing
2025 · Tomoya Okuda, Shunsuke Ota, et al. · Applied Physics Letters · 4
Polarity inversion of N-polar GaN by metalorganic vapor phase epitaxy via thermal oxidation
2025 · Kazuhisa Ikeda, Masahiro Uemukai, et al. · Japanese Journal of Applied Physics · 3
Polarity inversion of GaN from +c to −c polarity by metalorganic vapor phase epitaxy
2025 · Kazuhisa Ikeda, Masahiro Uemukai, et al. · Japanese Journal of Applied Physics · 2
Inference method of interior coils for regeneration of control programs
1999 · Kazuhisa Ikeda, Yoshitomo Ikkai, et al. · IFAC Proceedings Volumes · 1
Sequential Control Logic Inferring Method from Observed Plant I/O Data
1999 · Yoshitomo Ikkai, Kazuhisa Ikeda, et al. · Lecture notes in computer science · 1
Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures
2026 · Atsushi Kobayashi, Souta Kurogi, et al. · Advanced Materials
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Effect of Sc-composition sequence on the structural properties of sputter-epitaxial ScAlN multilayers on GaN
2026 · Nobuto Mimasaka, Kazuhisa Ikeda, et al. · Japanese Journal of Applied Physics
Interface engineering of ScAlN/GaN ferroelectric heterostructures using epitaxial Sc bottom electrodes
2026 · Ryota Yamamoto, Sawaki Sato, et al. · Japanese Journal of Applied Physics
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Erratum: “Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing” [Appl. Phys. Lett. 127 , 182103 (2025)]
2026 · Tomoya Okuda, Shunsuke Ota, et al. · Applied Physics Letters
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High-density two-dimensional electron gas in ScAlN/GaN heterostructures grown by sputter epitaxy with enhanced metal supply
2026 · Tomoya Okuda, Kouei Kubota, et al. · Applied Physics Express
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Sputter epitaxy of transition metal nitrides for ferroelectric and superconducting applications
2026 · Kazuhisa Ikeda, Takuya Maeda, et al.
First-principles structural analysis of polarity inversion boundaries in GaN
2025 · Takahiro Kawamura, Toru Akiyama, et al. · Japanese Journal of Applied Physics
Design of Deep Ultraviolet Second Harmonic Generation Device with Double -layer Layer Polarity Inverted AlN Waveguide
2019 · Asahi Yamauchi, Tenta Komatsu, et al. · The Japan Society of Applied Physics
Fabrication Process of InGaN High-Order Deeply Etched DBR Laser
2018 · So Kusumoto, Daiki Tazuke, et al. · The Japan Society of Applied Physics
The interior coil inference method with the logic parts attaching algorithm for automatic regeneration of sequential control programs
2001 · Kazuhisa Ikeda, Yoshitomo Ikkai, et al. · Electrical Engineering in Japan
The Inference Method of Interior Coils with Logic Parts Attaching Algorithm for Automatic Regeneration of Sequential Control Programs
2000 · Kazuhisa Ikeda, Yoshitomo Ikkai, et al. · IEEJ Transactions on Electronics Information and Systems
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Works count: 19
Citation count: 31
H-index: 4
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