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Zhaoqing Feng

ORCID: 0000-0001-9883-8757
Observed ORCID: 0000-0001-9883-8757
OpenAlex ID: A5084637984
Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2
2018 · Zhuangzhuang Hu, Hong Zhou, et al. · IEEE Electron Device Letters · 183
High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode With Implanted Edge Termination
2019 · Hong Zhou, Qian Feng, et al. · IEEE Electron Device Letters · 157
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
2020 · Zhuangzhuang Hu, Yuanjie Lv, et al. · IEEE Electron Device Letters · 86
Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure
2020 · Zhaoqing Feng, Xusheng Tian, et al. · IEEE Electron Device Letters · 74
Influence of annealing atmosphere on the performance of a β-Ga 2 O 3 thin film and photodetector
2018 · Zhaoqing Feng, Lu Huang, et al. · Optical Materials Express · 72
Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV
2018 · Zhuangzhuang Hu, Hong Zhou, et al. · IEEE Journal of the Electron Devices Society · 66
Design and fabrication of field-plated normally off β -Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application
2020 · Zhaoqing Feng, Yuncong Cai, et al. · Applied Physics Letters · 64
High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process
2021 · Zhe Li, Zhaoqing Feng, et al. · IEEE Electron Device Letters · 63
Tin-assisted growth of ε-Ga 2 O 3 film and the fabrication of photodetectors on sapphire substrate by PLD
2018 · Yuncong Cai, Ke Zhang, et al. · Optical Materials Express · 63
High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
2019 · Yangyang Gao, Ang Li, et al. · Nanoscale Research Letters · 62
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Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing
2020 · Yanni Zhang, Jincheng Zhang, et al. · IEEE Transactions on Electron Devices · 53
A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2
2019 · Zhaoqing Feng, Yuncong Cai, et al. · physica status solidi (a) · 44
Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes
2018 · Ang Li, Qian Feng, et al. · Superlattices and Microstructures · 43
Band alignment of SiO2/(Al Ga1-)2O3 (0 ≤x≤ 0.49) determined by X-ray photoelectron spectroscopy
2017 · Zhaoqing Feng, Qian Feng, et al. · Applied Surface Science · 41
Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V
2020 · Zhuangzhuang Hu, Jianguo Li, et al. · IEEE Transactions on Electron Devices · 38
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film
2019 · Zhuangzhuang Hu, Qian Feng, et al. · Nanoscale Research Letters · 38
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Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density
2023 · Yuncong Cai, Zhaoqing Feng, et al. · Applied Physics Letters · 33
The Investigation of β-Ga2O3 Schottky Diode with Floating Field Ring Termination and the Interface States
2020 · Zhuangzhuang Hu, Chunyong Zhao, et al. · ECS Journal of Solid State Science and Technology · 30
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Performance Improvement of a β -Ga₂O₃-Based Solar-Blind Metal Oxide Semiconductor Field-Effect Phototransistor Using In Situ Ozone Pretreatment Technology
2022 · Zhe Li, Zhaoqing Feng, et al. · IEEE Transactions on Electron Devices · 29
Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current
2020 · Yanni Zhang, Jincheng Zhang, et al. · Solid-State Electronics · 29
Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode
2018 · Qian Feng, Zhaoqing Feng, et al. · Applied Physics Letters · 28
Optical properties of (Al Ga1-)2O3 on sapphire
2017 · Zhuangzhuang Hu, Qian Feng, et al. · Superlattices and Microstructures · 28
The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
2020 · Tao Zhang, Yixian Shen, et al. · Nanoscale Research Letters · 26
Wafer-Scale Si–GaN Monolithic Integrated E-Mode Cascode FET Realized by Transfer Printing and Self-Aligned Etching Technology
2020 · Jiaqi Zhang, Weihang Zhang, et al. · IEEE Transactions on Electron Devices · 23
Band alignments of SiO2 and HfO2 dielectrics with (Al Ga1-)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphire
2018 · Zhaoqing Feng, Qian Feng, et al. · Journal of Alloys and Compounds · 21
Works count: 38
Citation count: 1,482
H-index: 23
I10-index: 31
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