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C. W. Yeh

Observed names: C. Yeh, C.W. Yeh, Chiao-Wen Yeh, Yeh, C.W.
ORCID: 0000-0002-8018-5812
Observed ORCID: 0000-0002-8018-5812
OpenAlex ID: A5084950175
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
2018 · Wei-Chih Chien, Chiao-Wen Yeh, et al. · IEEE Transactions on Electron Devices · 64
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
2017 · H. Y. Cheng, W. C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
2018 · H. Y. Cheng, W. C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 58
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
2015 · H. Y. Cheng, W. C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47
High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory
2018 · C. W. Yeh, W. C. Chien, et al. · Symposium on VLSI Technology · 29
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications
2019 · W.C. Chien, H.Y. Ho, et al. · Symposium on VLSI Technology · 25
A novel low power phase change memory using inter-granular switching
2016 · H.L. Lung, Y.H. Ho, et al. · Symposium on VLSI Technology · 25
Si Incorporation into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-Point Memory
2020 · H. Y. Cheng, I. T. Kuo, et al. · Symposium on VLSI Technology · 21
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
2016 · W. C. Chien, H. Y. Cheng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
2021 · H. Y. Cheng, W C. Chien, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
A No-Verification Multi-Level-Cell (MLC) Operation in Cross-Point OTS-PCM
2020 · N. Gong, W. Chien, et al. · Symposium on VLSI Technology · 19
A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
2011 · Wei-Chih Chien, Yi-Chou Chen, et al. · Japanese Journal of Applied Physics · 19
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A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application
2015 · W.C. Chien, Y.H. Ho, et al. · Symposium on VLSI Technology · 18
Overlay target design and evaluation for SADP process
2012 · C. W. Yeh, Chao-Tien H. Huang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16
A novel tite buffered Cu-GeSbTe/SiO2 electrochemical resistive memory (ReRAM)
2010 · Yu-Yu Lin, Feng-Ming Lee, et al. · Symposium on VLSI Technology · 15
A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
2016 · Hsiang-Lan Lung, Christopher P. Miller, et al. · IEEE International Memory Workshop (IMW) · 13
A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications
2024 · W.C. Chien, J.X. Zheng, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 11
Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory
2019 · W.C. Chien, L.M. Gignac, et al. · IEEE International Memory Workshop (IMW) · 10
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
2022 · H. Y. Cheng, A. Grun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory
2019 · N. Gong, W.C. Chien, et al. · IEEE International Memory Workshop (IMW) · 6
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
2022 · W. C. Chien, L. M. Gignac, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 3
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
2022 · W. C. Chien, L. M. Gignac, et al. · IEEE International Reliability Physics Symposium proceedings · 3
A Novel Program-verify Free and Low Drift Multilevel Operation on Cross-point OTS-PCM for In-Memory Computing Application
2024 · W. C. Chien, C. L. Sung, et al. · IEEE International Memory Workshop (IMW) · 2
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
2023 · W.C. Chien, E.K. Lai, et al. · IEEE International Memory Workshop (IMW) · 2
A Novel Ni/WOx/W ReRAM with Excellent Retention and Low Switching Current
2010 · W. C. Chien, Y. C. Chen, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Works count: 28
Citation count: 521
H-index: 15
I10-index: 18
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