Author

Jonathan Boucher

Observed name: J. Boucher

Institutions: Centre National de la Recherche Scientifique, Laboratoire d'Analyse et d'Architecture des Systèmes, Université de Toulouse

Observed institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Laboratoire d'Analyse et d'Architecture des Systèmes, Institut National des Sciences Appliquées de Toulouse, Université de Toulouse, Institut National des Sciences Appliquées de Lyon

OpenAlex ID: A5085225910

End-of-range defects in germanium and their role in boron deactivation

2010 · F. Panciera, P. F. Fazzini, et al. · Applied Physics Letters · 24

Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

2010 · Fabrice Severac, Fuccio Cristiano, et al. · Journal of Applied Physics · 14

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 · Lynda Saci, Ramdane Mahamdi, et al. · Japanese Journal of Applied Physics · 7

Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation

2012 · C. Nyamhere, F. Cristiano, et al. · AIP conference proceedings · 4

Works count: 4

Citation count: 49

H-index: 4

I10-index: 2