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Hernan A. Rueda

Observed names: H. Rueda, H.A. Rueda, Hernan Rueda
OpenAlex ID: A5085856501
A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications
2002 · J. Kirchgessner, S. Bigelow, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 45
Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications
2003 · J.P. John, F. Chai, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 25
Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy
1999 · Hernan Rueda, James Slinkman, et al. · MRS Proceedings · 13
Modeling of Mechanical Stress in Silicon Isolation Technology and Its Influence on Device Characteristics
1999 · Hernan Rueda · University of Florida Digital Collections (University of Florida) · 12
Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar
2006 · Jay John, Jim Kirchgessner, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 10
Modeling of Strain in Boron-Doped Silicon Cantilevers
1998 · M.E. Law, Hernan Rueda · TechConnect Briefs · 7
Device physics and EM simulation based modeling methodology for LDMOS RF power transistors
2017 · Dan Lamey, Lei Zhang, et al. · 6
A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
2011 · John P. Everett, Michael J. Kearney, et al. · IEEE Transactions on Electron Devices · 6
Theory and simulation of dopant implantation and diffusion in SiGe
2003 · Chun‐Li Liu, Marius Orlowski, et al. · physica status solidi (b) · 6
Mechanical stress modeling for silicon fabrication processes
2002 · H.A. Rueda, S. Cea, et al. · 6
The Emergence of SiGe:C HBT Technology for RF Applications
2003 · V. Ilderem, Selin Tolunay Wipf, et al. · 4
Theory and Simulation of Dopant Diffusion in SiGe
2003 · Chun-Li Liu, Marius Orlowski, et al. · MRS Proceedings · 4
Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors
2018 · Lei Zhang, Hernan Rueda, et al. · IEEE MTT-S International Microwave Symposium digest · 2
A half-kW capable 28-V LDMOS RF power transistor in a small-footprint package
2013 · L. Wang, H. Rueda, et al. · IEEE MTT-S International Microwave Symposium digest · 2
Fast physical models for Si LDMOS power transistor characterization
2011 · John P. Everett, Michael J. Kearney, et al. · IEEE MTT-S International Microwave Symposium digest · 2
Fast physical models for LDMOS power transistor characterization
2011 · J. P. Everett, M. J. Kearney, et al. · IEEE MTT-S International Microwave Symposium digest · 2
Algorithms for the Reduction of Surface Evolution Discretization Error
1995 · Hernan A. Rueda, Mark E. Law · Simulation of Semiconductor Devices and Processes · 2
Optimization of LDMOS power transistors for high power microwave amplifiers using highly efficient physics-based model
2011 · John P. Everett, M.J. Kearney, et al. · Surrey Research Insight Open Access (The University of Surrey) · 1
Model for the evolution of dislocation loops in silicon
2002 · I. Avci, H.A. Rueda, et al. · 1
TCAD based segmented modelling of large RF power-transistors-die for finger level analysis and optimization
2017 · Ibrahim Khalil, Hernan Rueda, et al. · European Microwave Integrated Circuits Conference
Substrate optimization for accurate EM simulation
2015 · Lei Zhang, Hernan Rueda, et al. · IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization
Process-orientated physics-based modeling of microwave power transistors: Small- and large-signal characterization
2012 · John P. Everett, Michael J. Kearney, et al. · IEEE MTT-S International Microwave Symposium digest
Modeling Threading Dislocation Loop Nucleation and Evolution in MeV Boron Implanted Silicon
2001 · Ibrahim Avci, Mark E. Law, et al. · MRS Proceedings
Works count: 23
Citation count: 155
H-index: 6
I10-index: 5
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