Get started
Author

Ryota Suewaka

Observed names: R. Suewaka, Suewaka Ryota, 末若, 良太
ORCID: 0000-0002-6172-8826
Observed ORCID: 0000-0002-6172-8826
OpenAlex ID: A5086394281
Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth
2014 · K. Nakamura, R. Suewaka, et al. · ECS Solid State Letters · 33
PDF
Effect of thermal stress on point defect behavior during single crystal Si growth
2019 · Ryota Suewaka, Kozo Nakamura · Japanese Journal of Applied Physics · 16
PDF
Impact of Marangoni effect of oxygen on solid–liquid interface shape during Czochralski silicon growth applied with transverse magnetic field
2023 · Ryota Suewaka, Shin-ichi Nishizawa · Journal of Crystal Growth · 14
Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal
2023 · Ryota Suewaka, Toshiaki Saishoji, et al. · Japanese Journal of Applied Physics · 8
PDF
Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal
2024 · Ryota Suewaka, Toshiaki Saishoji, et al. · Japanese Journal of Applied Physics · 3
Procédé De Production D'un Monocristal De Silicium
2017 · Kajiwara Kaoru, 梶原 薫, et al.
Effect of thermal history on grown-in defect behavior during single crystal Si growth
2016 · Ryota Suewaka, Toshiaki Saishoji, et al. · The Japan Society of Applied Physics
Effectof thermal stress on point defect behavior during single crystal Si growth
2014 · Ryota Suewaka · The Japan Society of Applied Physics
Works count: 9
Citation count: 74
H-index: 4
I10-index: 3
Year
Topic
Type