Author

Soumen Mazumder

Observed name: S. Mazumder

Institution: Picosun (Finland)

Observed institutions: Picosun (Finland), National Cheng Kung University

ORCID: 0000-0002-4386-4752

Observed ORCID: 0000-0002-4386-4752

OpenAlex ID: A5086481208

Ultra-Low Power Robust 3bit/cell Hf 0.5 Zr 0.5 O 2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology

2021 · Sourav De, Darsen D. Lu, et al. · Symposium on VLSI Technology · 42

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

2022 · Cheng-Yu Huang, Soumen Mazumder, et al. · Materials · 22

Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application

2022 · Parthasarathi Pal, Soumen Mazumder, et al. · ACS Applied Electronic Materials · 15

Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering

2021 · Shun-Kai Yang, Soumen Mazumder, et al. · Materials · 14

Combined Implications of UV/O3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT

2021 · Soumen Mazumder, Ssu-Hsien Li, et al. · Crystals · 14

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

2022 · Soumen Mazumder, Parthasarathi Pal, et al. · Materials · 13

A Low Program Voltage Enabled Flash like AlGaN/GaN Stack Layered MIS-HEMTs Using Trap Assisted Technique

2021 · Soumen Mazumder, Parthasarathi Pal, et al. · ECS Journal of Solid State Science and Technology · 10

DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation

2021 · Soumen Mazumder, Zhan-Gao Wu, et al. · Semiconductor Science and Technology · 5

Investigation of HfSiOX Passivation Effect on AlGaN/GaN HEMT

2020 · Soumen Mazumder, Yeong-Her Wang · International Symposium on Devices, Circuits and Systems (ISDCS) · 4

Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated Gate Interface and Thermal Engineering

2022 · Soumen Mazumder, Zhan-Gao Wu, et al. · ECS Journal of Solid State Science and Technology · 3

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf0.5Zr0.5O2 capacitors

2026 · Ella Paasio, Simon Thomann, et al. · Microsystems & Nanoengineering

Positive Shifting of Threshold Voltage of Nano-Channel (NC) AlGaN/GaN HEMTs with Post Gate Annealing (PGA) Modulation

2019 · S. Mazumder, Y.H. Wang · International Conference on Solid State Devices and Materials (SSDM)

Works count: 12

Citation count: 142

H-index: 7

I10-index: 7