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Nayana Remesh

Observed names: N. Remesh, Remesh, Nayana
ORCID: 0000-0001-9050-9190
Observed ORCID: 0000-0001-9050-9190
OpenAlex ID: A5086652131
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
2020 · Nayana Remesh, Nagaboopathy Mohan, et al. · IEEE Transactions on Electron Devices · 49
An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition
2021 · Neha Mohta, Ankit Rao, et al. · RSC Advances · 41
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Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer
2016 · Sachin Dev, Nayana Remesh, et al. · Applied Physics Letters · 27
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices
2021 · Khawaja Nizammuddin Subhani, Nayana Remesh, et al. · Solid-State Electronics · 17
Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
2018 · Nayana Remesh, Nagaboopathy Mohan, et al. · IEEE Transactions on Electron Devices · 17
Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
2021 · Nayana Remesh, Hareesh Chandrasekar, et al. · Journal of Applied Physics · 16
Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)
2020 · Shashwat Rathkanthiwar, Anisha Kalra, et al. · Journal of Applied Physics · 16
Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si
2017 · Sandeep Kumar, Nayana Remesh, et al. · Solid-State Electronics · 15
Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader
2019 · Pavani Vamsi Krishna Nittala, Nayana Remesh, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 8
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A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
2019 · Nayana Remesh, Sandeep Kumar, et al. · physica status solidi (a) · 3
Contact barrier height and resistivity reduction using low work-function metal (Yb)-interfacial layer-semiconductor contacts on n-type Si and Ge
2015 · N. Remesh, S. Dev, et al. · Conference digest · 3
Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon
2020 · Anisha Kalra, Shashwat Rathkanthiwar, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Ge n-channel FinFET performance enhancement using low work function metal-interfacial layer-Ge contacts
2017 · Prashanth P. Manik, Sachin Dev, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1
Works count: 14
Citation count: 214
H-index: 8
I10-index: 8
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