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Mengnan Ke

Observed names: KE, MENGNAN, M. Ke, Mengnang Ke
ORCID: 0000-0001-8235-9559
Observed ORCID: 0000-0001-8235-9559
OpenAlex ID: A5086663453
III-V/Ge MOS device technologies for low power integrated systems
2016 · S. Takagi, M. Noguchi, et al. · Solid-State Electronics · 48
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process
2019 · Mengnan Ke, Mitsuru Takenaka, et al. · ACS Applied Electronic Materials · 29
Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment
2020 · Tsung-En Lee, Mengnan Ke, et al. · IEEE Transactions on Electron Devices · 24
Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation
2019 · T.-E. Lee, K. Kato, et al. · Symposium on VLSI Technology · 23
Fabrication and MOS interface properties of ALD AlYO3/GeO /Ge gate stacks with plasma post oxidation
2015 · M. Ke, X. Yu, et al. · Microelectronic Engineering · 20
Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation
2018 · Mengnan Ke, Mitsuru Takenaka, et al. · IEEE Journal of the Electron Devices Society · 19
Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation
2016 · M. Ke, X. Yu, et al. · Applied Physics Letters · 18
Back-End-of-Line Compatible HfO 2 /ZrO 2 Superlattice Ferroelectric Capacitor With TiO 2 Seed Layer for Enhanced Ferroelectricity
2025 · Huan Liu, Dongya Li, et al. · IEEE Transactions on Electron Devices · 16
Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing
2020 · Tsung-En Lee, Mengnan Ke, et al. · Journal of Applied Physics · 11
Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces
2018 · M. Ke, P. Cheng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process
2019 · Mengnan Ke, Mitsuru Takenaka, et al. · IEEE Transactions on Electron Devices · 9
Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers
2017 · M. Ke, M. Takenaka, et al. · Microelectronic Engineering · 9
Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks
2019 · T.-E. Lee, K. Kato, et al. · Microelectronic Engineering · 8
Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM
2022 · Yuwa Kishi, Akihiro Yamada, et al. · IEEE Transactions on Magnetics · 7
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Improvement of Generalization Performance for Timber Health Monitoring using Machine Learning
2020 · Kenta Suzuki, Takumi Ito, et al. · IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) · 6
Experimental evidence for passivating the surface dangling bonds to alleviate the Fermi-level pinning in metal-semiconductor contacts
2025 · Jiarong Zhao, Ziying Xiang, et al. · Semiconductor Science and Technology · 5
Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
2024 · Tianshun Xie, Mengnan Ke, et al. · Applied Physics Letters · 5
Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers
2017 · Mengnan Ke, Mitsuru Takenaka, et al. · European Solid-State Device Research Conference · 5
A Comprehensive Study on the Polarization, Reliability, and Switching Dynamics of Helium Ion-Bombardment HfZrO Ferroelectric Films
2025 · Peiyuan Du, Huan Liu, et al. · IEEE Transactions on Electron Devices · 4
Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation
2023 · Tianshun Xie, Mengnan Ke, et al. · Japanese Journal of Applied Physics · 3
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Enhanced contact properties of MoTe2-FET via laser-induced heavy doping
2022 · Tianshun Xie, Kazuki Fukuda, et al. · Japanese Journal of Applied Physics · 3
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Effectiveness of Synchronization and Cooperative Behavior of Multiple Robots based on Swarm AI
2019 · Tatsuya Hiejima, Shun Kawashima, et al. · IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) · 3
Evaluation and study of spin Seebeck effect in Pt/Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 and Pt/Y 3 Fe 5 O 12 /sapphire systems
2019 · Mengnan Ke, Atsushi Yamamoto, et al. · Japanese Journal of Applied Physics · 2
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(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks
2017 · Shinichi Takagi, Mengnan Ke, et al. · ECS Transactions · 2
(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices
2015 · Shinichi Takagi, Chih-Yu Chang, et al. · ECS Transactions · 2
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Works count: 56
Citation count: 296
H-index: 10
I10-index: 10
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