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Author

Shin Mou

Observed names: Mou, Shin, S. Mou, S.M. Mou
Observed institutions: West Virginia University, United States Air Force Research Laboratory, Pennsylvania State University, University of Massachusetts Lowell, Iowa State University, Wright State University, Hong Kong University of Science and Technology, Cornell University, Wright-Patterson Air Force Base, Azimuth (United States), UES (United States), Agnitron Technology (United States), PARADIM, U.S. Air Force Research Laboratory Sensors Directorate, U.S. Air Force Research Laboratory Information Directorate, Wright Laboratory, U.S. Air Force Research Laboratory Materials and Manufacturing Directorate, U.S. Air Force Institute of Technology, National Cheng Kung University
ORCID: 0000-0001-5228-2562
Observed ORCID: 0000-0001-5228-2562
OpenAlex ID: A5086834694
β-Gallium oxide power electronics
2022 · Andrew J. Green, James Speck, et al. · APL Materials · 563
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
2018 · Yuewei Zhang, Adam Neal, et al. · Applied Physics Letters · 355
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
2017 · Neil Moser, Jonathan McCandless, et al. · IEEE Electron Device Letters · 238
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
2016 · Subrina Rafique, Lu Han, et al. · Applied Physics Letters · 162
Single Defect Light-Emitting Diode in a van der Waals Heterostructure
2016 · Genevieve Clark, John R. Schaibley, et al. · Nano Letters · 148
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
2020 · George Seryogin, Fikadu Alema, et al. · Applied Physics Letters · 145
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
2017 · Subrina Rafique, Lu Han, et al. · physica status solidi (a) · 131
Lateral β-Ga2O3 field effect transistors
2019 · Kelson D Chabak, Kevin D Leedy, et al. · Semiconductor Science and Technology · 128
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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
2017 · Adam T. Neal, Shin Mou, et al. · Scientific Reports · 123
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P-type conduction in two-dimensional MoS2 via oxygen incorporation
2017 · Adam T. Neal, Ruth Pachter, et al. · Applied Physics Letters · 91
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
2021 · Patrick Vogt, Felix V. E. Hensling, et al. · APL Materials · 86
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Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire
2017 · Subrina Rafique, Lu Han, et al. · Optical Materials Express · 68
Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
2023 · Kathy Azizie, Felix V. E. Hensling, et al. · APL Materials · 67
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS 2
2016 · Brahim Akdim, Ruth Pachter, et al. · Nanotechnology · 62
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Toward high voltage radio frequency devices in β-Ga2O3
2020 · Neil Moser, Kyle Liddy, et al. · Applied Physics Letters · 58
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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
2020 · Neil A. Moser, Tadj Asel, et al. · IEEE Electron Device Letters · 55
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Controlled Si doping of β -Ga2O3 by molecular beam epitaxy
2022 · J. P. McCandless, V. Protasenko, et al. · Applied Physics Letters · 53
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
2021 · Celesta S. Chang, Nicholas Tanen, et al. · APL Materials · 50
Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor
2019 · C. A. Lenyk, N. C. Giles, et al. · Journal of Applied Physics · 49
Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy
2020 · Thaddeus J. Asel, Erich Steinbrunner, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 35
Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films
2022 · A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, et al. · Journal of Applied Physics · 34
Ultra‐Long Lifetimes of Single Quantum Emitters in Monolayer WSe 2 /hBN Heterostructures
2019 · Chandriker Kavir Dass, Mahtab A. Khan, et al. · Advanced Quantum Technologies · 27
Tunability in the optical response of defective monolayer WSe 2 by computational analysis
2018 · Jie Jiang, Ruth Pachter, et al. · Nanoscale · 22
Toward realization of Ga2O3 for power electronics applications
2017 · Gregg Jessen, Kelson Chabak, et al. · Conference digest · 21
β-Ga 2 O 3 defect study by steady-state capacitance spectroscopy
2018 · Shin-Sheng Huang, Roberto Lopez, et al. · Japanese Journal of Applied Physics · 20
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Works count: 70
Citation count: 2,968
H-index: 22
I10-index: 33
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