Get started
Author

Nelson de Almeida Braga

Observed names: N. De Almeida Braga, N. de Almeida Braga, Nelson De Almeida Braga
Observed institution: Synopsys (United States)
ORCID: 0009-0008-0280-245X
Observed ORCID: 0009-0008-0280-245X
OpenAlex ID: A5087075994
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
2022 · Hao Yu, B. Parvais, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
Modeling of Hole Generation Process in AlGaN/GaN HEMTs
2025 · Ying-Chun Kuo, Hao Yu, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3
Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress
2025 · Meng-Che Tsai, Ying-Chun Kuo, et al. · IEEE Transactions on Electron Devices · 3
Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT
2023 · Hao Yu, J. Fang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Semi-On State Hole Generation in GaN HEMTs: Experimental Evidence and TCAD Modeling
2026 · Ying-Chun Kuo, Hao Yu, et al. · IEEE Electron Device Letters
Predictive Nanoscale Simulations for the THz Regime
2025 · Ulrik G. Vej-Hansen, Kevin Galiano, et al. · International Conference on Simulation of Semiconductor Processes and Devices
Works count: 6
Citation count: 32
H-index: 3
I10-index: 1
Year
Topic
Type