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A. Amrouche
Observed institution:
Centre de Développement des Technologies Avancées
OpenAlex ID:
A5087189768
Channel length impact on radiation-induced threshold voltage shift in N-MOSFET devices at low gamma rays radiation doses
2003
·
B. Djezzar
, A. Smatti
, et al.
·
IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
·
1
Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses
2002
·
B. Djezzar
, A. Amrouche
, et al.
·
IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
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Works count:
2
Citation count:
1
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