Author

Getu Endale

Institution: Wolkite University

Observed institutions: Guru Jambheshwar University of Science and Technology, Wolkite University

ORCID: 0000-0002-5954-4593

Observed ORCID: 0000-0002-5954-4593

OpenAlex ID: A5087235735

Analysis of z-scan signals for thin and thick optical materials through strong focusing with enhanced sensitivity

2022 · Getu Endale, Devendra Mohan · Journal of Optics · 10

Effects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor under Low injection Level

2019 · Getu Endale · Universal Journal of Materials Science · 7

Focusing of radially polarized bessel gaussian and hollow gaussian beam of high NA to achieve super resolution

2022 · Getu Endale, Devendra Mohan, et al. · Optik · 6

Investigation of structural, morphological and nonlinear optical properties of ZnO thin films using reflective Z-scan technique

2023 · Getu Endale, Poonam Loura, et al. · Optical and Quantum Electronics · 5

Effect of thickness on nonlinear optical properties of EZO thin films

2023 · Chetan Sharma, Monika Barala, et al. · Physica Scripta · 5

Focusing of Radially polarized Light Using Gaussian laser beam Near its focal length

2022 · Getu Endale, Devendra Mohan, et al. · IOP Conference Series Materials Science and Engineering · 1

Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor

2020 · Getu Endale, Megersa Wodajo · Universal Journal of Applied Science · 1

Investigations of third order nonlinear optical properties and density functional theory (DFT)-based computational analysis of optical properties for undoped and Sr-doped ZnO thin films

2026 · Getu Endale, Devendra Mohan · Optical and Quantum Electronics

Generalized theoretical investigation of weak thick third order non-local nonlinear for ZnO using Z-scan technique

2026 · Getu Endale, Devendra Mohan · Journal of Optics

The Effects of Localized Trap Energy on the Photoluminescence Intensity of Gallium Nitrate (GaN) Compound Semiconductor for Different Radiative Trap Level

2019 · Getu Endale · Universal Journal of Physics and Application

Time Dependence of Transient Radiative Excess Carrier Lifetimes and Carriers Density in Indium Antimonide(InSb) Semiconductor in the Presence and Absence of Illumination

2019 · Getu Endale · Universal Journal of Physics and Application

Works count: 11

Citation count: 35

H-index: 5

I10-index: 1