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Birgit Kallinger

Observed names: B. Kallinger, Kallinger, B., Kallinger, Birgit
ORCID: 0000-0002-5060-1918
Observed ORCID: 0000-0002-5060-1918
OpenAlex ID: A5087370083
Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography
2010 · B. Kallinger, S. Polster, et al. · Journal of Crystal Growth · 54
Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide
2023 · Shravan Kumar Parthasarathy, Birgit Kallinger, et al. · Physical Review Applied · 29
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Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates
2013 · Birgit Kallinger, Patrick Berwian, et al. · Journal of Crystal Growth · 29
Doping induced lattice misfit in 4H–SiC homoepitaxy
2012 · Birgit Kallinger, Patrick Berwian, et al. · Journal of Crystal Growth · 25
Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence
2015 · Patrick Berwian, Daniel Kaminzky, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 21
Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
2019 · J. Erlekampf, B. Kallinger, et al. · Journal of Applied Physics · 19
Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
2010 · Birgit Kallinger, Bernd Thomas, et al. · Materials science forum · 15
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
2008 · Birgit Kallinger, Bernd Thomas, et al. · Materials science forum · 13
Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
2013 · Birgit Kallinger, Sebastian Polster, et al. · Journal of Applied Physics · 12
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Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV
2009 · Bernd Thomas, Christian Hecht, et al. · Materials science forum · 11
Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
2018 · Johannes Schoeck, Holger Schlichting, et al. · Materials science forum · 10
Ohmic and rectifying contacts on bulk AlN for radiation detector applications
2012 · Tobias Erlbacher, Matthias Bickermann, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects
2021 · J. Erlekampf, M. Rommel, et al. · Journal of Crystal Growth · 9
Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
2013 · Birgit Kallinger, Patrick Berwian, et al. · Materials science forum · 8
Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
2016 · Larissa Wehrhahn-Kilian, Karl Otto Dohnke, et al. · Materials science forum · 7
4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
2011 · Birgit Kallinger, Bernd Thomas, et al. · Materials science forum · 6
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
2009 · Bernd Zippelius, M. Krieger, et al. · Materials science forum · 6
Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material
2007 · B. Kallinger, E. Meissner, et al. · Crystal Research and Technology · 6
Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry
2007 · B. Kallinger, E. Meissner, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
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Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications
2024 · Jannik H. Schwarberg, Robin Karhu, et al. · International Convention on Information and Communication Technology, Electronics and Microelectronics · 5
Influence and Mutual Interaction of Process Parameters on the Z1/2 Defect Concentration during Epitaxy of 4H-SiC
2018 · Jürgen Erlekampf, Daniel Kaminzky, et al. · Materials science forum · 5
Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor
2023 · Birgit Kallinger, Philip Hens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
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Optical Stressing of 4H-SiC Material and Devices
2018 · Birgit Kallinger, Daniel Kaminzky, et al. · Materials science forum · 4
Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
2014 · Birgit Kallinger, Mathias Rommel, et al. · Materials science forum · 4
Scalable Fabrication and Electrical Characterization of Lateral Pin-Diodes on 4H-SiC A-Plane Wafers for Functionalization of Silicon Vacancies
2026 · Jannik H. Schwarberg, Christian Gobert, et al. · Key engineering materials · 3
Works count: 114
Citation count: 343
H-index: 10
I10-index: 12
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