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Klas-Håkan Eklund

Observed names: K. Eklund, K. H. Eklund, K.-H Eklund, K.-H. Eklund, K.H. Eklund, Klas Håkan Eklund, Klas-Hakan Eklund
OpenAlex ID: A5087708207
1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
2002 · J. Olsson, N. Rorsman, et al. · IEEE Electron Device Letters · 37
Drift region optimization of lateral RESURF devices
2002 · L Vestling, J Olsson, et al. · Solid-State Electronics · 22
Low Resistivity SOI for Substrate Crosstalk Reduction
2005 · J. Ankarcrona, L. Vestling, et al. · IEEE Transactions on Electron Devices · 16
Ion implantation in silicon films on sapphire
1974 · K. H. Eklund, G. Holmén, et al. · Applied Physics Letters · 12
Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process
2002 · A. Soderbarg, B. Edholm, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Power Characteristics of High Voltage LDMOS Transistors
2000 · Edward Gebara, Niklas Rorsman, et al. · European Microwave Conference (EuMC) · 9
Comparison between Si-LDMOS and GaN-based microwave power transistors
2003 · S. Nuttinck, E. Gebara, et al. · IEEE Lester Eastman Conference on High Performance Devices · 8
Amorphization of Silicon Crystals Bombarded by 30 keV Phosphorus Ions at Different Temperatures
1971 · K. H. Eklund, Å. Andersson · Springer eBooks · 6
A new latch-free LIGBT on SOI with very high current density and low drive voltage
2015 · J. Olsson, L. Vestling, et al. · Solid-State Electronics · 5
Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors
2009 · Lars Vestling, Olof Bengtsson, et al. · Solid-State Electronics · 5
Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors
2004 · J. Ankarcrona, K.-H. Eklund, et al. · Solid-State Electronics · 4
High Voltage LDMOS Transistors for Increasing RF Power Density and Gain
2001 · Niklas Rorsman, Jörgen Olsson, et al. · 4
Efficient crosstalk reduction using very low resistivity SOI substrate
2005 · J. Ankarcrona, L. Vestling, et al. · European Solid-State Device Research Conference · 3
Low Resistivity SOI for Improved Efficiency of LDMOS
2006 · Johan Ankarcrona, Mattias Larsen, et al. · 2
Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS
2003 · Johan Ankarcrona, Klas-Håkan Eklund, et al. · 1
On-line sheet conductivity measurements during ion bombardment of ion-doped silicon layers
1973 · Å. Anderson, K. H. Eklund, et al. · Radiation Effects · 1
The Isothermal Annealing of Defects Created in Phosphorus Ion Doped Silicon by Additional Bombardment with Phosphorus Ions
1973 · K.-H. Eklund, Å. Andersson · Springer eBooks · 1
The Use of Cobalt Glass for High Intensity Electron Dosimetry
1961 · Klas-Håkan Eklund, Robert Timmerman · Transactions of the American Nuclear Society · 1
A new latch-free LIGBT on SOI
2015 · J. Olsson, L. Vestling, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Increased efficiency in RF-power SOI-LDMOS transistors
2009 · Lars Vestling, Olof Bengtsson, et al.
High Efficiency using Optimized SOI-Substrates
2008 · Lars Vestling, Olof Bengtsson, et al.
High Power Efficiency using Very Low Resistivity SOI
2007 · Johan Ankarcrona, Lars Vestling, et al.
Improved Output Resistance in RF-power MOSFETs using Low Resistivity SOI Substrate
2005 · Johan Ankarcrona, Mattias Larsen, et al.
Analysis of crosstalk in SOI substrates
2005 · Johan Ankarcrona, Lars Vestling, et al.
Understanding and accurate modelling of nonlinear LDMOS transistor dc characteristics
2005 · Christian Fager, Klas-Håkan Eklund, et al. · Chalmers Publication Library (Chalmers University of Technology)
Works count: 34
Citation count: 147
H-index: 7
I10-index: 5
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