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Megha Sharma

Observed name: Sharma, Megha
Observed institutions: National Aerospace Laboratories, Lehigh University, Siksha O Anusandhan University, Somaiya Vidyavihar University, Council of Scientific and Industrial Research, Delhi Technological University
ORCID: 0000-0002-6769-5420
Observed ORCID: 0000-0002-6769-5420
OpenAlex ID: A5088159751
In-vitro and in-vivo evaluation of repaglinide loaded floating microspheres prepared from different viscosity grades of HPMC polymer
2015 · Megha Sharma, Seema Kohli, et al. · Saudi Pharmaceutical Journal · 74
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An approach for in situ measurement of anode temperature during the growth of self-ordered nanoporous anodic alumina thin films: Influence of Joule heating on pore microstructure
2013 · P. Chowdhury, Ann Nimmy Thomas, et al. · Electrochimica Acta · 38
Design and Investigation of Recessed-T-Gate Double Channel HEMT with InGaN Back Barrier for Enhanced Performance
2021 · Megha Sharma, Rishu Chaujar · Arabian Journal for Science and Engineering · 32
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design
2023 · Bhavya Kumar, Megha Sharma, et al. · Microelectronics Journal · 21
Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization
2023 · Bhavya Kumar, Megha Sharma, et al. · Microelectronics Journal · 16
Effect of electrolyte temperature on the formation of highly ordered nanoporous alumina template
2016 · B. Sellarajan, Megha Sharma, et al. · Microporous and Mesoporous Materials · 16
Ethylcellulose Floating Microspheres of Antidiabetic Agent: in Vitro and in Vivo Evaluation
2016 · Seema Kohli, Megha Sharma, et al. · International Journal of Applied Pharmaceutics · 14
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Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
2023 · Megha Sharma, Bhavya Kumar, et al. · Materials Science and Engineering B · 13
Impact of Graded Back-Barrier on Linearity of Recessed Gate InAlN/GaN HEMT
2020 · Megha Sharma, Rishu Chaujar · IEEE VLSI Device Circuit and System (VLSI DCS) · 13
Experimental circuit design and TCAD analysis of ion sensitive field effect transistor (ISFET) for pH sensing
2023 · Yash Pathak, Piyush Mishra, et al. · Materials Science and Engineering B · 12
Facile synthesis of flower-like carbon microspheres for carbon dioxide capture
2022 · Megha Sharma, Mark A. Snyder · Microporous and Mesoporous Materials · 12
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Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications
2022 · Megha Sharma, Rishu Chaujar · International Journal of RF and Microwave Computer-Aided Engineering · 12
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Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs
2023 · Megha Sharma, Bhavya Kumar, et al. · Micro and Nanostructures · 7
An Assembly and Interfacial Templating Route to Carbon Supercapacitors with Simultaneously Tailored Meso- and Microstructures
2019 · Zheng Tian, Megha Sharma, et al. · ACS Applied Materials & Interfaces · 6
Device Optimization of T-shaped Gate and Polarized Doped Buffer-Engineered InAlN/GaN HEMT for Improved RF/Microwave Performance
2024 · Megha Sharma, Rishu Chaujar · Arabian Journal for Science and Engineering · 5
Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications
2022 · Bhavya Kumar, Megha Sharma, et al. · 2022 8th International Conference on Signal Processing and Communication (ICSC) · 2
Dual-k Spacer JAM-GS-GAA FinFET: A Device for Low Power Analog Applications
2022 · Bhavya Kumar, Megha Sharma, et al. · IEEE Silchar Subsection Conference (SILCON) · 2
The Performance Analysis of 70nm T-gate InAlN/AlN MOS-HEMT using Graded Buffer
2021 · Megha Sharma, Rishu Chaujar · Devices for Integrated Circuit (DevIC) · 2
Stability of Floating Microspheres at Normal and Accelerated Conditions
2016 · Megha Sharma, Seema Kohli, et al. · International Journal of Pharmacy and Pharmaceutical Sciences · 2
BGaN back barrier engineering on E-mode T-gate double heterostructure HEMT for high RF applications
2022 · Megha Sharma, Rishu Chaujar · IEEE International RF and Microwave Conference · 1
Linearity analysis of T-gate HEMT with graded back-barrier for wireless applications
2022 · Megha Sharma, Bhavya Kumar, et al. · IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) · 1
Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance
2022 · Megha Sharma, Bhavya Kumar, et al. · Materials Today Proceedings · 1
Illumination Control using MEMS based Detection
2016 · Masood Anzar, Tarun Rajvanshi, et al. · International Journal of Engineering Research and · 1
pocketqube-fsm: configuration-driven, model-checked decision engine for PocketQube deployment and downlink scheduling
2026 · Rathi, Nikunj, Pote, Purva, et al. · Zenodo (CERN European Organization for Nuclear Research)
Evaluation of Wound Healing and Epithelialization Using Toluidine Blue Dye Indicator in Diode Laser Frenectomy With and Without Surgical Microscope
2024 · Mayank Singh, Vidya Sekhar, et al. · International Journal of Advanced Research
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Works count: 29
Citation count: 303
H-index: 12
I10-index: 12
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