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Jeevesh Kumar
Observed names:
Kumar, J,
Kumar, Jeevesh
Institutions:
Indian Institute of Technology Dhanbad,
Indian Institute of Science Bangalore
Observed institutions:
Indian Institute of Technology Dhanbad,
Indian Institute of Science Bangalore
ORCID:
0000-0001-6178-8434
Observed ORCID:
0000-0001-6178-8434
OpenAlex ID:
A5088780832
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
2019
·
Sayak Dutta Gupta
, Ankit Soni
, et al.
·
IEEE Transactions on Electron Devices
·
53
Stone–Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight
2020
·
Jeevesh Kumar
, Ansh
, et al.
·
ACS Omega
·
32
PDF
Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal–TMDs’ Interface Chemistry
2023
·
Jeevesh Kumar
, Mayank Shrivastava
·
ACS Omega
·
29
PDF
Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition
2023
·
Ansh Ansh
, Utpreksh Patbhaje
, et al.
·
Communications Materials
·
28
PDF
Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors
2020
·
Ansh
, Jeevesh Kumar
, et al.
·
npj 2D Materials and Applications
·
26
PDF
Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy
2020
·
Andrew E. Naclerio
, Dmitri N. Zakharov
, et al.
·
ACS Applied Materials & Interfaces
·
24
Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD–Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs
2020
·
Ansh
, Jeevesh Kumar
, et al.
·
IEEE Transactions on Electron Devices
·
24
PDF
MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
2024
·
Anand Kumar Rai
, Asif A. Shah
, et al.
·
ACS Nano
·
23
MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
2019
·
Kuruva Hemanjaneyulu
, Jeevesh Kumar
, et al.
·
IEEE Transactions on Electron Devices
·
20
First-Principles Molecular Dynamics Insight into the Atomic Level Degradation Pathway of Phosphorene
2022
·
Jeevesh Kumar
, Mayank Shrivastava
·
ACS Omega
·
15
Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress
2020
·
Bhawani Shankar
, Swati Shikha
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
12
PDF
Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering
2019
·
Ansh
, Jeevesh Kumar
, et al.
·
IEEE Transactions on Electron Devices
·
12
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
2022
·
Kuruva Hemanjaneyulu
, Adil Meersha
, et al.
·
IEEE Transactions on Electron Devices
·
10
Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs
2022
·
Jeevesh Kumar
, Adil Meersha
, et al.
·
IEEE Transactions on Electron Devices
·
10
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight
2020
·
Jeevesh Kumar
, Ansh Ansh
, et al.
·
Conference digest
·
10
Gaps in the Y-Function Method for Contact Resistance Extraction in 2D Few-Layer Transition Metal Dichalcogenide Back-Gated FETs
2022
·
Kuruva Hemanjaneyulu
, Jeevesh Kumar
, et al.
·
IEEE Electron Device Letters
·
9
Unveiling inverse piezoelectricity and field induced nonvolatile strain in 2D TMDs
2025
·
Utpreksh Patbhaje
, Rupali Verma
, et al.
·
npj 2D Materials and Applications
·
6
PDF
Unveiling the Interfacial Behavior of Au Contacted MoS2 Atomristor and the Role of Point Defects
2023
·
Asif A. Shah
, Jeevesh Kumar
, et al.
·
IEEE Transactions on Electron Devices
·
6
Reconfiguration of Intrinsic Depletion‐Mode Characteristics of MoS2 Field‐Effect Transistors to High‐Performance Enhancement‐Mode Operation Using an Argon Plasma‐Induced p‐Type Doping Technique
2024
·
Anand Kumar Rai
, Asif A. Shah
, et al.
·
Small Methods
·
5
Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs
2024
·
Utpreksh Patbhaje
, Rupali Verma
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
5
Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs
2023
·
Utpreksh Patbhaje
, Rupali Verma
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
5
Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight
2021
·
Jeevesh Kumar
, Ansh
, et al.
·
ACS Omega
·
5
PDF
First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel
2020
·
Ansh Ansh
, Gaurav Sheoran
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
5
Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress
2020
·
Jeevesh Kumar
, Ansh
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
A First Principle Insight into Defect Assisted Contact Engineering at the Metal-Graphene and Metal-Phosphorene Interfaces
2019
·
Jeevesh Kumar
, Adil Meersha
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
4
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Works count:
50
Citation count:
402
H-index:
12
I10-index:
15
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