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Félix Palumbo

Observed names: F Palumbo, F. Palumbo, F. R. M. Palumbo, F. R. Palumbo, Felix Palumbo, Felix R. Palumbo, Felix Roberto Palumbo, Palumbo, F., Palumbo, Felix
Observed institutions: Universitat Autònoma de Barcelona, National Technological University, Consejo Nacional de Investigaciones Científicas y Técnicas, Universidad Nacional de Córdoba, Technion – Israel Institute of Technology, Universidad de Buenos Aires, China Nuclear Energy Association, National Research Council, Institute for Microelectronics and Microsystems, Comisión Nacional de Energía Atómica
ORCID: 0000-0002-7749-5035
Observed ORCID: 0000-0002-7749-5035
OpenAlex ID: A5088810600
Dielectric breakdown mechanisms in gate oxides
2005 · Salvatore Lombardo, James H. Stathis, et al. · Journal of Applied Physics · 468
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics
2019 · Felix Palumbo, Chao Wen, et al. · Advanced Functional Materials · 291
Standards for the Characterization of Endurance in Resistive Switching Devices
2021 · Mario Lanza, Rainer Waser, et al. · ACS Nano · 278
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Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient
2003 · Chih Hang Tung, Kin Leong Pey, et al. · Applied Physics Letters · 107
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
2021 · Juan B. Roldán, Gerardo González-Cordero, et al. · Nanomaterials · 68
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Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride
2017 · Lanlan Jiang, Yuanyuan Shi, et al. · ACS Applied Materials & Interfaces · 58
Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP$^{3}$
2013 · G. Hubert, R. Velazco, et al. · IEEE Transactions on Nuclear Science · 50
150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors
2020 · Bin Yuan, Xianhu Liang, et al. · Advanced Electronic Materials · 45
Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller
2022 · Sebastian Pazos, Wenwen Zheng, et al. · Nanoscale · 43
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Physical mechanism of progressive breakdown in gate oxides
2014 · Felix Palumbo, Salvatore Lombardo, et al. · Journal of Applied Physics · 41
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Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition
2020 · Fernando Leonel Aguirre, Sebastian Matias Pazos, et al. · IEEE Access · 40
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A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
2008 · R. Pagano, S. Lombardo, et al. · Microelectronics Reliability · 37
High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors
2023 · Sebastian Pazos, Thales Becker, et al. · Advanced Functional Materials · 36
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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
2021 · Mario Lanza, Felix Palumbo, et al. · Advanced Electronic Materials · 31
Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation
2014 · R. Pagano, S. Lombardo, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 23
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Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
2014 · F. Palumbo, M. Eizenberg · Journal of Applied Physics · 22
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Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
2017 · Kechao Tang, Felix Roberto Palumbo, et al. · ACS Applied Materials & Interfaces · 19
Hf-based high-k dielectrics for p-Ge MOS gate stacks
2013 · Sivan Fadida, Felix Palumbo, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 19
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Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures
2012 · F. Palumbo, E. Miranda, et al. · IEEE Electron Device Letters · 18
Structure of the oxide damage under progressive breakdown
2005 · F. Palumbo, G. Condorelli, et al. · Microelectronics Reliability · 18
Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
2018 · Igor Krylov, Xianbin Xu, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 17
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SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model
2021 · Fernando L. Aguirre, Sebastián M. Pazos, et al. · Frontiers in Physics · 16
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Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric
2018 · Felix Palumbo, Xianhu Liang, et al. · Advanced Electronic Materials · 16
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Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect
2011 · E. Miranda, F. Palumbo · Solid-State Electronics · 16
Structure and Conductance of the Breakdown Spot During the Early Stages of Progressive Breakdown
2006 · Giovanni Condorelli, Salvatore A. Lombardo, et al. · IEEE Transactions on Device and Materials Reliability · 16
Works count: 118
Citation count: 2,148
H-index: 18
I10-index: 37
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