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Maximilian Goller

Observed name: M. Goller
Observed institution: Chemnitz University of Technology
ORCID: 0009-0000-9103-5038
Observed ORCID: 0009-0000-9103-5038
OpenAlex ID: A5088875363
Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors
2021 · Maximilian Goller, Jorg Franke, et al. · European Conference on Power Electronics and Applications · 8
Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP
2024 · Maximilian Goller, Jörg Franke, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters
2025 · Lukas Hein, Maximilian Goller, et al. · Power Electronic Devices and Components · 3
Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage
2025 · Maximilian Goller, Madhu Lakshman Mysore, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
2024 · Maximilian Goller, Jörg Franke, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
2026 · Madhu Lakshman Mysore, Maximilian Goller, et al. · Key engineering materials · 1
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Investigation of Gate Driving Condition on p-GaN HEMTs under Single Event Short Circuit Type I
2025 · Gengqi Li, Maximilian Goller, et al. · International Seminar on Power Semiconductors (ISPS) · 1
Influencing Parameters on the Dynamic On-State Resistance RDS,on in GaN HEMTs and its Recovery Behavior
2025 · Maximilian Goller, Gengqi Li, et al. · International Seminar on Power Semiconductors (ISPS) · 1
Influence of Interface Traps and Cell Design on Dynamic V SD Behaviour in Double-Trench SiC MOSFETs
2026 · Madhu Lakshman Mysore, Rahul-Vijaybhai Chavda, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
Neutron Radiation-Induced Failure Rate of 650 V Lateral GaN Power Devices
2024 · Leon Fauth, Christian Beckemeier, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Adapted temperature calibration for Schottky p-GaN power HEMTs
2023 · Maximilian Goller, Jörg Franke, et al. · International Seminar on Power Semiconductors (ISPS)
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Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept
2020 · M. Goller, M.A. Thim, et al. · Microelectronics Reliability
Works count: 12
Citation count: 23
H-index: 3
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