Author

Ulrich Menczigar

Observed names: Menczigar, U., U Menczigar, U. MENCZIGAR, U. Menczigar

Institution: Leibniz Institute for High Performance Microelectronics

Observed institutions: Lund University, Technical University of Munich, Daimler (Germany), Leibniz Institute for High Performance Microelectronics

OpenAlex ID: A5089647886

Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics

1992 · H Presting, H Kibbel, et al. · Semiconductor Science and Technology · 144

Enhanced band-gap luminescence in strain-symmetrized (Si )m /(Ge )n superlattices

1993 · U. Menczigar, G. Abstreiter, et al. · Physical review. B, Condensed matter · 111

Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001)

1992 · W. Wegscheider, J. Olajos, et al. · Journal of Crystal Growth · 71

Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties

1990 · W. Wegscheider, K. Eberl, et al. · Applied Physics Letters · 68

Strain and confinement effects on optical phonons in short period (100) Si/Ge superlattices

1990 · E. Friess, K. Eberl, et al. · Solid State Communications · 46

Photoluminescence studies of Si/Si1 − xGex quantum wells and SimGen superlattices

1992 · U. Menczigar, J. Brunner, et al. · Thin Solid Films · 32

Band gap of strain-symmetrized, short-period Si/Ge superlattices

1992 · Janos Olajos, Jesper Engvall, et al. · Physical review. B, Condensed matter · 32

Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

1992 · J. Brunner, U. Menczigar, et al. · Thin Solid Films · 31

Improvement of structural properties of Si/Ge superlattices

1989 · K. Eberl, E. Friess, et al. · Thin Solid Films · 24

Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements

1995 · A. Kaniava, A. L. P. Rotondaro, et al. · Applied Physics Letters · 23

Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

1993 · J. Brunner, J. Nützel, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Photo- and electroluminescence in short-period Si/Ge superlattice structures

1994 · J Olajos, J Engvall, et al. · Semiconductor Science and Technology · 15

Electro- and photoluminescence studies from ultrathin SimGen superlattices

1993 · H. Presting, U. Menczigar, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 11

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 · M. Gail, J. Brunner, et al. · MRS Proceedings · 11

Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown Si1-xGex quantum wells

1993 · J. Brunner, U. Menczigar, et al. · Journal of Crystal Growth · 9

Electro- and Photoluminescence from Ultrathin SImGEn Superlattices

1991 · H. Presting, U. Menczigar, et al. · MRS Proceedings · 9

IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quaiity Silicon

1995 · A. Kaniava, U. Menczigar, et al. · MRS Proceedings · 2

Enhanced Band-Gap Luminescence in Strain-Symmetrized (Si)m(Ge)n Superlattices

1993 · U. Menczigar, G. Abstreiter, et al. · MRS Proceedings · 2

Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance

1991 · Ulrich Menczigar, Michael J. Dahmen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)

1991 · U. Menczigar, K. Eberl, et al. · MRS Proceedings · 2

Strained Layer Heterostructures and Superlattices Based on Group IV Elements

1991 · G. Abstreiter, K. Eberl, et al. · NATO ASI series. Series B : Physics · 1

IMPROVEMENT OF STRUCTURAL PROPERTIES OF Si/Ge SUPERLATTICES

1989 · K. EBERL, E. FRIESS, et al. · Elsevier eBooks · 1

Superlattices Based on Group IV Elemental Semiconductors(Si, Ge, α-Sn)

1993 · Janos Olajos, Jesper Engvall, et al. · International Conference on Solid State Devices and Materials (SSDM)

Highly strained alpha-Sn/Ge superlattices: new man-made semiconductors

1990 · W. Wegscheider, K. Eberl, et al. · University of Regensburg Publication Server (University of Regensburg)

Phonons and Optical Properties of Si/Ge Superlattices

1989 · G. Abstreiter, K. Eberl, et al. · NATO ASI series. Series B : Physics

Works count: 26

Citation count: 670

H-index: 12

I10-index: 14