1997 · G. Adegboyega, I. Perez-Quintana, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7

Effect of Rapid Thermal Annealing on Electrical and Structural Properties of Silicon

1991 · A. Poggi, E. Susi · Journal of The Electrochemical Society · 7

Problems and results of diffusion length investigations by energy‐dependent EBIC measurements

1985 · M. Kittler, W. Seifert, et al. · Crystal Research and Technology · 7

Temperature dependent conductivity of closely compensated phosphorus-doped silicon

1977 · M. Finetti, A. M. Mazzone, et al. · Philosophical magazine · 7

Surface Modifications in Si after Rapid Thermal Annealing

2002 · A. Castaldini, D. Cavalcoli, et al. · Journal of The Electrochemical Society · 6

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Some electrical characteristics of Fe and its annealing behaviour in FZ silicon

1990 · G. A. Adegboyega, A. Poggi, et al. · physica status solidi (a) · 6

Morphological and Electrical Characterization of Etched Si Wafers

2004 · V. Palermo, E. Susi, et al. · Journal of The Electrochemical Society · 5

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Electrical Properties of Rapid Thermal Annealing Induced Defects in Silicon

1995 · E. Susi, A. Poggi, et al. · Journal of The Electrochemical Society · 5

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The electrical activity of stacking faults in Czochralski silicon

1989 · A. Castaldini, A. Cavallini, et al. · Applied Physics A · 5

Recombination mechanisms in crystalline silicon: bulk and surface contributions

1999 · Enrichetta Susi · International Journal of Photoenergy · 4

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Study of the electrical active defects induced by reactive ion etching in n-type silicon

1995 · M. Biavati, I. Perez-Quintana, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

Denuded zone stability in a SPAD diode as a function of out-diffusion parameters

1987 · A. Poggi, M. Reiche, et al. · IEEE Transactions on Electron Devices · 3

Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si

2001 · Antonio Castaldini, Daniela Cavalcoli, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2

Intrinsic Gettering of Manganese Impurity in Silicon Substrate

1997 · G. A. Adegboyega, O. Osasona, et al. · physica status solidi (a) · 2

Surface damage in processed silicon

1996 · A. Castaldini, A. Cavallini, et al. · Materials Science and Engineering B · 2

The effects of oxygen precipitates on the electrical properties of silver impurities in p-type silicon

1996 · G. A. Adegboyega, L. Passari, et al. · physica status solidi (a) · 2

Works count: 44

Citation count: 229

H-index: 8

I10-index: 3