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Author

Jun Fujise

Observed names: Jun FUJISE, 藤瀬, 淳
ORCID: 0000-0001-5688-638X
Observed ORCID: 0000-0001-5688-638X
OpenAlex ID: A5089882268
Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics
2023 · Hiroshi Uchiyama, Te-Huan Liu, et al. · Physical Review Materials · 11
Measurement and empirical equation of critical stresses for slip generation from oxide precipitates in silicon wafers
2018 · Jun Fujise, Bonggyun Ko, et al. · Japanese Journal of Applied Physics · 9
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The Critical Shear Stress for Slip Generation due to Scratches in Silicon Wafers
2020 · Jun Fujise, Bonggyun Ko, et al. · ECS Journal of Solid State Science and Technology · 7
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Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon
2014 · Kazuhisa Torigoe, Jun Fujise, et al. · Journal of Applied Physics · 7
Tensile Deformation of Si Single Crystals with Easy Glide Orientation
2021 · Tubasa Suzuki, Masaki Tanaka, et al. · MATERIALS TRANSACTIONS · 6
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Effect of Surface Oxygen Concentration on Wafer Strength in Floating Zone Si Wafers
2020 · Jun Fujise, Bonggyun Ko, et al. · ECS Journal of Solid State Science and Technology · 4
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Influence of impurities on mechanical strength of silicon crystal
2019 · Kousuke Takata, Jun Fujise, et al. · Japanese Journal of Applied Physics · 4
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Formulation of mobile dislocation density in oxygen-precipitated silicon by crystal plasticity model
2019 · Bonggyun Ko, Jun Fujise, et al. · Japanese Journal of Applied Physics · 2
Effect of ion implantation on mechanical strength of silicon wafers
2022 · Kousuke Takata, Jun Fujise, et al. · Japanese Journal of Applied Physics · 1
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Thermally activated plastic deformation of Si single crystals at temperatures above 1173 K
2023 · Tubasa Suzuki, Masaki Tanaka, et al. · Japanese Journal of Applied Physics
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Effects of High-Pressure Hydrogen Gas Exposure on the Residual Stress Fields and Cracks around Vickers Indentations
2022 · Hiroshi Nishiguchi, Masato Ino, et al. · Procedia Structural Integrity
Tensile Deformation of Si Single Crystals at High Temperatures
2021 · Tubasa Suzuki, Masaki Tanaka, et al. · Materials science forum
Work-hardening in Si single crystals
2019 · Tubasa SUZUKI, Tatsuya MORIKAWA, et al. · The Proceedings of the Materials and Mechanics Conference
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Effect of Strain Rate on Generation of Slip Dislocation from Scratch in Si Wafers
2018 · Jun Fujise, Toshiaki Ono · The Japan Society of Applied Physics
Strength Analysis of Impurity-doped Si Wafers by HAS-model
2018 · Kousuke Takata, Jun Fujise, et al. · The Japan Society of Applied Physics
Optical phonon lifetimes observed via inelastic x-ray scattering for highly-doped Si single crystals
2017 · Hiroshi Uchiyama, Toshiaki Ono, et al. · The Japan Society of Applied Physics
Effect of Annealing on Generation of Slip Dislocation from Scratches in Si Wafers
2017 · Jun Fujise, Toshiaki Ono · The Japan Society of Applied Physics
Critical Stress for Generation of Slip Dislocation Developing from Scratches in Si Wafers
2016 · Jun Fujise, Toshiaki Ono · The Japan Society of Applied Physics
Critical stress for generation of slip dislocation developing around oxide precipitates in silicon wafers
2015 · Jun Fujise · The Japan Society of Applied Physics
Works count: 20
Citation count: 51
H-index: 5
I10-index: 1
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