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Arpit Nandi

Observed names: A. Nandi, Nandi, Arpit
ORCID: 0000-0003-1160-8655
Observed ORCID: 0000-0003-1160-8655
OpenAlex ID: A5090285760
Epitaxial Growth of (−201) β-Ga 2 O 3 on (001) Diamond Substrates
2023 · Arpit Nandi, David Cherns, et al. · Crystal Growth & Design · 45
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Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes
2021 · Arpit Nandi, Kanchan Singh Rana, et al. · IEEE Transactions on Electron Devices · 36
Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector
2020 · Ashish Kumar, Arpit Nandi, et al. · IEEE Transactions on Electron Devices · 34
Broad Range (254–302 nm) and High Performance Ga 2 O 3 :SnO 2 Based Deep UV Photodetector
2022 · Arnab Mondal, Santu Nandi, et al. · IEEE Transactions on Nanotechnology · 23
Thermodynamics of Ga 2 O 3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition
2024 · Indraneel Sanyal, Arpit Nandi, et al. · ACS Applied Electronic Materials · 22
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Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications
2025 · Xiaoyang Ji, Sai Charan Vanjari, et al. · ACS Applied Electronic Materials · 18
Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates
2024 · C. A. Dawe, V. P. Markevich, et al. · Journal of Applied Physics · 10
Adherent β-Ga2O3 thin films on single crystal diamond (001) substrates enabled by (AlxGa1−x)2O3 buffer layers
2025 · Arpit Nandi, Ramandeep Mandia, et al. · APL Materials · 7
Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics
2024 · Arnab Mondal, Manoj K. Yadav, et al. · Applied Physics Letters · 4
Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration
2023 · Abhishek Mishra, Arpit Nandi, et al. · Oxide-based Materials and Devices · 4
Molecular beam epitaxy of boron arsenide layers
2025 · Tin S. Cheng, Jonathan Bradford, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 3
Carrier transport and electronic defects in gallium oxide studied by photoconductivity techniques
2025 · Steve Reynolds, David Nicol, et al. · Journal of Physics Conference Series · 3
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Heterogenous integration of gallium oxide with diamond and SiC
2024 · Arpit Nandi, Indraneel Sanyal, et al. · Oxide-based Materials and Devices · 3
MOCVD Growth of κ-Ga 2 O 3 on Al-Rich Al x Ga 1– x N Templates: Phase Diagram and Microstructural Evolution
2026 · Khai D. Ngo, Usman Ul Muazzam, et al. · Crystal Growth & Design
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On the nature of deep-level defects in β -Ga2O3 epilayers: The impact of isochronal rapid thermal annealing
2026 · Christopher A. Dawe, Douglas M. Murray Lendering, et al. · Journal of Applied Physics
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Microanalysis of β-(AlxGa1−x)2O3 Films Grown by MOCVD
2026 · Mugove Maruzane, Arpit Nandi, et al. · Materials
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(Pseudo-)symmetry-driven coherent interfaces and texture in epitaxial β-Ga 2 O 3 thin films on (001) diamond
2025 · Ramandeep Mandia, Arpit Nandi, et al. · Journal of Applied Crystallography
Selective area growth of β-Ga2O3
2023 · Nandi, Arpit, Sanyal, Indraneel, et al. · Bristol Research (University of Bristol)
Works count: 19
Citation count: 212
H-index: 7
I10-index: 7
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