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Author

Ahmed Elsayed

Observed names: A Elsayed, A. Elsayed
ORCID: 0000-0002-9680-8527
Observed ORCID: 0000-0002-9680-8527
OpenAlex ID: A5090647231
Low charge noise quantum dots with industrial CMOS manufacturing
2024 · A. Elsayed, M. M. K. Shehata, et al. · npj Quantum Information · 71
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High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
2021 · T N Camenzind, A Elsayed, et al. · Materials for Quantum Technology · 15
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Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
2021 · Jon Schlipf, Henriette Tetzner, et al. · Journal of Raman Spectroscopy · 8
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Insulated Gate Bipolar Transistors based on Pure Boron Collectors
2019 · Ahmed Elsayed, Jan Frederik Dick, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions
2018 · Ahmed Elsayed, Joerg Schulze · International Convention on Information and Communication Technology, Electronics and Microelectronics · 4
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C
2019 · Tihomir Knežević, Tomislav Suligoj, et al. · European Solid-State Device Research Conference · 3
Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy
2019 · J. F. Dick, A. Elsayed, et al. · International Convention on Information and Communication Technology, Electronics and Microelectronics · 2
Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery
2025 · Mohamed Alaluss, Madhu Lakshman Mysore, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
Growth and Characterisation of Pure B Layers on Ge(hkl) and Si(hkl) Utilizing Molecular Beam Epitaxy
2019 · Daniel Schwarz, Ahmed Elsayed, et al. · ECS Transactions · 1
Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiCTM Engineered Substrates
2025 · Mohamed Alaluss, Christoph Böhm, et al. · Key engineering materials
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Electrical Characterization of pure Boron-on-Germanium pin Diodes
2019 · L. Gebert, D. Schwarz, et al. · International Convention on Information and Communication Technology, Electronics and Microelectronics
Works count: 11
Citation count: 109
H-index: 4
I10-index: 2
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