Author

Ming-kwei Lee

Institution: San’an Optoelectronics (China)

Observed institution: San’an Optoelectronics (China)

ORCID: 0009-0002-8866-1841

Observed ORCID: 0009-0002-8866-1841

OpenAlex ID: A5090780189

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

2022 · Yi Liu, Sufen Wei, et al. · Journal of Materials Research and Technology · 28

Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C

2024 · Qianqian Shi, Sufen Wei, et al. · Journal of Materials Research and Technology · 11

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

2023 · Sufen Wei, Yi Liu, et al. · Coatings · 5

Works count: 3

Citation count: 44

H-index: 3

I10-index: 2