Author

H. M. Cox

Observed names: H M Cox, H. Cox, H. M. COX, H.M Cox, H.M. Cox

Observed institutions: AT&T (United States), Universidade de Brasília, Princeton University, University of Oxford, Core Competence, Nokia (United States), Carnegie Mellon University

ORCID: 0000-0001-6108-666X

Observed ORCID: 0000-0001-6108-666X

OpenAlex ID: A5091033400

Atomic ordering in Ga0.47 In0.53 As and Gax In1−x Asy P1−y alloy semiconductors

1987 · M. A. Shahid, S. Mahajan, et al. · Physical Review Letters · 184

Control of gate—Drain avalanche in GaAs MESFET's

1980 · S.H. Wemple, W.C. Niehaus, et al. · IEEE Transactions on Electron Devices · 133

Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

1981 · S.H. Wemple, W.C. Niehous, et al. · IEEE Transactions on Electron Devices · 64

Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

1984 · F. Capasso, H. M. Cox, et al. · Applied Physics Letters · 61

Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces

1989 · E. Colas, E. Kapon, et al. · Applied Physics Letters · 47

Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

1988 · E. Yablonovitch, H. M. Cox, et al. · Applied Physics Letters · 43

Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

1989 · P. C. Morais, H. M. Cox, et al. · Applied Physics Letters · 42

Optical-Phonon Emission in Ballistic Transport through Microchannels of InGaAs

1985 · Pong-Fei Lu, D. C. Tsui, et al. · Physical Review Letters · 39

Vapor levitation epitaxy: system design and performance

1986 · H.M. Cox, S.G. Hummel, et al. · Journal of Crystal Growth · 38

Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays

1990 · H. M. Cox, D. E. Aspnes, et al. · Applied Physics Letters · 36

Vapor levitation epitaxy: A new concept in epitaxial crystal growth

1984 · H.M. Cox · Journal of Crystal Growth · 31

Reliability of power GaAs field-effect transistors

1982 · H. Fukui, S.H. Wemple, et al. · IEEE Transactions on Electron Devices · 31

High-sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy

1984 · C. Y. Chen, B. L. Kasper, et al. · Applied Physics Letters · 28

Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures

1985 · H.M. Cox, M.A. Koza, et al. · Journal of Crystal Growth · 27

Investigation of many-body effects in one-side modulation-doped InP-InGaAs heterostructure

1996 · A. J. C. Cardoso, P. C. Morais, et al. · Applied Physics Letters · 25

Weak-fieldgfactor of the two-dimensional electron gas at the (In,Ga)As/InP interface

1986 · Deborah L. Vehse, S. G. Hummel, et al. · Physical review. B, Condensed matter · 21

Formation of laterally propagating supersteps of InP/InGaAs on vicinal wafers

1989 · H. M. Cox, P. S. Lin, et al. · Applied Physics Letters · 19

Shallow donor spectroscopy and polaron coupling in Ga0.47In0.53As

1985 · R J Nicholas, C K Sarkar, et al. · Journal of Physics C Solid State Physics · 19

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Tunneling spectroscopy of In0.53Ga0.47As thin films

1984 · Pong-Fei Lu, D. C. Tsui, et al. · Applied Physics Letters · 19

Spatial variation of bandgap energy in In0.53Ga0.47As

1984 · A.F.S. Penna, Jagdeep Shah, et al. · Solid State Communications · 19

Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure

1999 · A. F. G. Monte, S. W. da Silva, et al. · Journal of Applied Physics · 18

Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

1985 · R. A. Stall, R. J. Wunder, et al. · Applied Physics Letters · 18

Optimization of low-noise GaAs MESFET's

1980 · H. Fukui, J.V. DiLorenzo, et al. · IEEE Transactions on Electron Devices · 17

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

1987 · W.K. Chan, H.M. Cox, et al. · Electronics Letters · 16

Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy

1989 · B.J. Skromme, R. Bhat, et al. · IEEE Journal of Quantum Electronics · 14

Works count: 57

Citation count: 1,183

H-index: 19

I10-index: 32