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Chao-Ching Cheng

Ultralow contact resistance between semimetal and monolayer semiconductors
2021 · Pin-Chun Shen, Cong Su, et al. · Nature · 1,477
Layered Semiconducting 2D Materials for Future Transistor Applications
2021 · Sheng-Kai Su, Chih-Piao Chuu, et al. · Small Structures · 166
Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics
2021 · Ang-Sheng Chou, Tong Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 104
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
2022 · Yun-Yan Chung, Bo-Jhih Chou, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 86
High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts
2020 · Ang-Sheng Chou, Chao-Ching Cheng, et al. · IEEE Electron Device Letters · 73
High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$
2008 · C. H. Cheng, S. H. Lin, et al. · IEEE Electron Device Letters · 73
Characteristics of Atomic-Layer-Deposited Al[sub 2]O[sub 3] High-k Dielectric Films Grown on Ge Substrates
2008 · Chao-Ching Cheng, Chao-Hsin Chien, et al. · Journal of The Electrochemical Society · 41
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Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
2022 · Zheng Sun, Chin-Sheng Pang, et al. · ACS Nano · 40
Low cost silver alloy wire bonding with excellent reliability performance
2013 · C. H Cheng, H. L Hsiao, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 39
First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate
2019 · Chao-Ching Cheng, Yun-Yan Chung, et al. · Symposium on VLSI Technology · 37
High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping
2020 · Ang-Sheng Chou, Pin-Chun Shen, et al. · Symposium on VLSI Technology · 36
High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping
2023 · Po-Hsun Ho, Yu-Ying Yang, et al. · Nano Letters · 33
Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm
2022 · Tsung-En Lee, Yuan-Chun Su, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method
2023 · Po-Hsun Ho, Ren-Hao Cheng, et al. · ACS Nano · 30
Monolayer-MoS 2 Stacked Nanosheet Channel with C-type Metal Contact
2023 · Yun-Yan Chung, Wei-Sheng Yun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS
2022 · Sheng-Kai Su, Edward Chen, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 29
High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate
2007 · Guang-Li Luo, Yen-Chang Hsieh, et al. · Journal of Applied Physics · 28
Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel
2023 · Ang-Sheng Chou, Ching-Hao Hsu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Energy-Efficient Monolithic 3-D SRAM Cell With BEOL MoS2 FETs for SoC Scaling
2020 · Vita Pi-Ho Hu, Cheng-Wei Su, et al. · IEEE Transactions on Electron Devices · 25
Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor
2022 · Ming-Yang Li, Ching-Hao Hsu, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 24
High-performance monolayer MoS2 nanosheet GAA transistor
2023 · Bo-Jhih Chou, Yun-Yan Chung, et al. · Nanotechnology · 23
High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing
2021 · Vita Pi-Ho Hu, Chang-Ju Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
2011 · Hau-Yu Lin, San-Lein Wu, et al. · Applied Physics Letters · 21
Study of Thermal Stability of HfO[sub x]N[sub y]∕Ge Capacitors Using Postdeposition Annealing and NH[sub 3] Plasma Pretreatment
2007 · Chao-Ching Cheng, Chao-Hsin Chien, et al. · Journal of The Electrochemical Society · 21
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Scaled contact length with low contact resistance in monolayer 2D channel transistors
2023 · Wen-Chia Wu, Terry Y.T. Hung, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 20
Works count: 96
Citation count: 3,072
H-index: 21
I10-index: 53
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